Coherence, interference and the Pauli principle: Coulomb scattering of carbon from carbon

1981 ◽  
Vol 2 (2) ◽  
pp. 109-113 ◽  
Author(s):  
G -R Plattner ◽  
I Sick
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Dmitriy S. Shapiro

AbstractUnder nonequilibrium conditions, quantum optical systems reveal unusual properties that might be distinct from those in condensed matter. The fundamental reason is that photonic eigenstates can have arbitrary occupation numbers, whereas in electronic systems these are limited by the Pauli principle. Here, we address the steady-state transport of pseudothermal photons between two waveguides connected through a cavity with Bose–Hubbard interaction between photons. One of the waveguides is subjected to a broadband incoherent pumping. We predict a continuous transition between the regimes of Lorentzian and Gaussian chaotic light emitted by the cavity. The rich variety of nonequilibrium transport regimes is revealed by the zero-frequency noise. There are three limiting cases, in which the noise-current relation is characterized by a power-law, $$S\propto J^\gamma$$ S ∝ J γ . The Lorentzian light corresponds to Breit-Wigner-like transmission and $$\gamma =2$$ γ = 2 . The Gaussian regime corresponds to many-body transport with the shot noise ($$\gamma =1$$ γ = 1 ) at large currents; at low currents, however, we find an unconventional exponent $$\gamma =3/2$$ γ = 3 / 2 indicating a nontrivial interplay between multi-photon transitions and incoherent pumping. The nonperturbative solution for photon dephasing is obtained in the framework of the Keldysh field theory and Caldeira-Leggett effective action. These findings might be relevant for experiments on photon blockade in superconducting qubits, thermal states transfer, and photon statistics probing.


1991 ◽  
Vol 104 (4) ◽  
pp. 607-609 ◽  
Author(s):  
D. Kekez ◽  
A. Ljubičić ◽  
S. Kaučić ◽  
B. A. Logan
Keyword(s):  

1981 ◽  
Vol 23 (1) ◽  
pp. 42-49 ◽  
Author(s):  
A. Picklesimer ◽  
R. M. Thaler

Author(s):  
S.A. Akimenko ◽  
V.I. Belousov ◽  
A.M. Blik ◽  
G.I. Britvich ◽  
V.N. Kolosov ◽  
...  

1968 ◽  
Vol 46 (10) ◽  
pp. S201-S203
Author(s):  
V. V. Guzhavin ◽  
I. P. Ivanenko ◽  
B. E. Samosudov

An analytical solution of the angular problem to the approximation of middle angles which is valid for any angles of particle deviation in an elementary event of Coulomb scattering has been obtained using the approximate operator (Vaskin et al. 1966). The proposed method makes it possible to evaluate the accuracy of the resulting expressions and the contribution from non-multiple and multiple Coulomb scattering.


2014 ◽  
Vol 105 (20) ◽  
pp. 201109 ◽  
Author(s):  
S. Zybell ◽  
J. Bhattacharyya ◽  
S. Winnerl ◽  
F. Eßer ◽  
M. Helm ◽  
...  
Keyword(s):  

2008 ◽  
Vol 17 (10) ◽  
pp. 2106-2109 ◽  
Author(s):  
AKIHIRO TOHSAKI

A nucleon is available for examining the property of α-condensate, which consists of composite bosons. Only a microscopic model, which fully takes into account the Pauli principle between all the constituent nucleons, can play its role. We give numerical results by equidistant spectrum model for the system of a neutron and 3α-cluster states. We discuss whether an extra nucleon can exist in the center of α-condensate or not.


2007 ◽  
Vol 556-557 ◽  
pp. 835-838 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Philip A. Mawby ◽  
James A. Covington ◽  
Phillippe Godignon ◽  
...  

In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the fieldeffect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.


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