High pressure study of GaAs-Al x Ga 1-x As multiple quantum well structure

1987 ◽  
Vol 4 (6) ◽  
pp. 261-264 ◽  
Author(s):  
Zhao XueShu ◽  
Li Guohua ◽  
Han Hexiang ◽  
Wang Zhaoping ◽  
Tang Ruming ◽  
...  
1995 ◽  
Vol 406 ◽  
Author(s):  
J. Q. Zhang ◽  
Z. X. Liu ◽  
Z. P. Wang ◽  
H. X. Han ◽  
G. H. Li ◽  
...  

AbstractThe photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.


1996 ◽  
Vol 27 (1) ◽  
pp. 87-92
Author(s):  
P.M. Nikolić ◽  
Z. Ristovski ◽  
S. Đurić ◽  
V. Blagojević ◽  
M.D. Dramićanin ◽  
...  

1995 ◽  
Vol 182-184 ◽  
pp. 455-458 ◽  
Author(s):  
P.J. Boyce ◽  
D. Wolverson ◽  
J.J. Davies ◽  
W. Heimbrodt

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