Photoluminescence and Raman Scattering from (CdSe)m,(ZnSe)n-ZnSe Multiple Quantum Wells Under Hydrostatic Pressure

1995 ◽  
Vol 406 ◽  
Author(s):  
J. Q. Zhang ◽  
Z. X. Liu ◽  
Z. P. Wang ◽  
H. X. Han ◽  
G. H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phonon Modes ◽  
Quantum Well Structure

AbstractThe photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.

TEMPERATURE AND HYDROSTATIC PRESSURE DEPENDENCE OF SUBBAND STRUCTURE IN GaAs/AlxGa1−xAs MULTIPLE QUANTUM WELL

1990 ◽  
Vol 04 (14) ◽  
pp. 917-920 ◽  
Author(s):  
Y. FU
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Quantum Wells ◽  
Pressure Dependence ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Bulk Gaas ◽  
Pressure Coefficients ◽  
Subband Energy ◽  
Subband Structure

The temperature and hydrostatic pressure dependence of GaAs/AlxGa1−xAs multiple quantum well subband structures has been examined theoretically. Such effects on the subband energy measured from the corresponding band optimum are negligible, and therefore, the temperature and the hydrostatic pressure coefficients of these multiple quantum wells are dominated by those coefficients of the bulk GaAs bandgap.

Resonant Raman Scattering in Strained and Relaxed InxGa1-xN/GaN Multiple Quantum Wells

2005 ◽  
Vol 494 ◽  
pp. 19-24
Author(s):  
S. Lazić ◽  
J.M. Calleja ◽  
F.B. Naranjo ◽  
S. Fernández ◽  
Enrique Calleja
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Raman Shift ◽  
Multiple Quantum ◽  
Direct Estimate ◽  
Resonant Raman ◽  
Resonant Raman Scattering

We present resonant Raman scattering measurements on strained and relaxed InxGa1-xN/GaN multiple quantum wells. The pseudomorphic sample does not show significant deviation of the A1(LO) phonon frequency with respect to GaN value due to a strong compensation of composition and strain effects which makes the frequency of this mode almost independent on In concentration. In contrast, the relaxed sample shows a marked decrease of the Raman frequency. Raman spectra excited in the energy range of sample emission have been recorded at room temperature. The resonant conditions have been attained using tuneable lasers in the blue-green spectral region. Resonant profiles are significantly blue-shifted with respect to the photoluminescence emission as a result of an inhomogeneous In distribution. In relaxed multiple quantum well, the Raman shift of the A1(LO) mode and the maximum of the resonant Raman profile give a direct estimate of the In concentration and its variation range.

High pressure study of GaAs-Al x Ga 1-x As multiple quantum well structure

1987 ◽  
Vol 4 (6) ◽  
pp. 261-264 ◽  
Author(s):  
Zhao XueShu ◽  
Li Guohua ◽  
Han Hexiang ◽  
Wang Zhaoping ◽  
Tang Ruming ◽  
...  
Keyword(s):  
High Pressure ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structure ◽  
High Pressure Study

Raman and Photoluminescence Characterization of FIB Patterned AIGaAs/GaAs Multiple Quantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
Ahn Goo Choo ◽  
Xuelong. Cao ◽  
Spirit Tlali ◽  
Howard E. Jackson ◽  
Peter Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pl Spectra ◽  
Spatially Resolved

AbstractRaman and photoluminescence (PL) spectra have been used to characterize A10.3Ga0.7As/GaAs multiple quantum well (MQW) structures that have been patterned by focused ion beam (FIB) implantation followed by rapid thermal annealing (RTA). Microprobe Raman scattering is used to identify the appropriate RTA and FIB implantation conditions that provide for removal of implantation-induced damage and for compositional intermixing. FIB patterned wire-like structures are characterized by spatially resolved PL spectra.

High-temperature crystallinity restoring layers and their optimal positions for ultra-thick InGaN/GaN multiple-quantum-well structures

CrystEngComm ◽  
2021 ◽  
Author(s):  
Yu Guo ◽  
Huanqing Chen ◽  
Rui Lang ◽  
Menglai Lei ◽  
Hua Zong ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Crystal Quality ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Progressive Deterioration

Maintaining crystal quality during the growth of very thick multiple-quantum-wells is challenging due to the progressive deterioration in thick low-temperature barriers. The insertion of several high-temperature crystallinity restoring (CR) layers...

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