Improvements in the structural quality of Al0.48In0.52As grown by low pressure metal-organic vapour-phase epitaxy

1988 ◽  
Vol 3 (3) ◽  
pp. 223-226 ◽  
Author(s):  
J I Davies ◽  
P D Hodson ◽  
A C Marshall ◽  
M D Scott ◽  
R J M Griffiths
Keyword(s):  
Low Pressure ◽  
Vapour Phase ◽  
Structural Quality ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

Growth and properties of GaxIn1−xAs–GaAs strained layer superlattices grown by low-pressure metal-organic vapour-phase epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 909-912 ◽  
Author(s):  
A. P. Roth ◽  
R. A. Masut ◽  
M. Sacilotti ◽  
P. J. D'Arcy ◽  
G. I. Sproule ◽  
...  
Keyword(s):  
Gas Flow ◽  
Flow Direction ◽  
Low Pressure ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Strained Layer ◽  
Additional Strain ◽  
Metal Organic ◽  
Organic Vapour ◽  
Strained Layer Superlattices

We have analyzed the structural and optical properties of GaxIn1−xAs–GaAs strained-layer superlattices (SLS) grown by low-pressure metal-organic vapour-phase epitaxy. Sample uniformity over 2.5 cm × 2.5 cm has been studied by X-ray diffraction and low-temperature photoluminescence. The sample composition and period are uniform in the longitudinal direction (gas-flow direction in the reactor) and in the central portion (1.5 cm) in the transverse direction. On each side, the In composition decreases slightly towards the edges, as shown by an energy shift of the photoluminescence excitonic recombinations. Comparison of experimental and calculated transition energies in a series of samples, taking into account strain and quantization, shows clearly that SLS grown on mismatched buffer layers arc under additional strain. This additional strain is not present when the layer or whole SLS thicknesses exceed a critical value beyond which the mismatch is partially accommodated by misfit dislocations.

Investigation of the cationic ordering in InGaP/GaAs epilayers grown by low-pressure, metal organic vapour phase epitaxy

1994 ◽  
Vol 28 (1-3) ◽  
pp. 219-223 ◽  
Author(s):  
L. Francesio ◽  
P. Franzosi ◽  
M. Caldironi ◽  
L. Vitali ◽  
M. Dellagiovanna ◽  
...  
Keyword(s):  
Low Pressure ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Time-resolved photoluminescence study of InGaAs–GaAs single heterostructures

1991 ◽  
Vol 69 (3-4) ◽  
pp. 456-460
Author(s):  
R. Leonelli ◽  
D. Morris ◽  
J. L. Brebner ◽  
Duan Jiaqi ◽  
A. P. Roth ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Misfit Dislocations ◽  
Time Resolved ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Excitonic Emission ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

We report the results of time-resolved photoluminescence studies of the near band-gap emission from relaxed, nonpseudomorphic In0.06Ga0.94As layers grown by metal-organic vapour-phase epitaxy on GaAs substrates oriented exactly on the (001) plane and misoriented by 2° off (001) towards <110>. The layer grown on the misoriented substrate shows a narrow excitonic emission whose lifetime of 1.2 ns is indicative of the high quality of the material. The emission from the layer grown on the oriented substrate consists of four bands. Their time-resolved spectra indicate that they can be attributed to excitons bound to different distributions of levels located either in homogeneous, strain-free regions or in regions near the epilayer misfit dislocations. We also present evidence indicating that hydrogen is more readily incorporated in layers grown on oriented substrates.

High speed non-selfaligned InP/InGaAs Npn heterojunction bipolar transistor grown by low pressure metal organic vapour phase epitaxy

1992 ◽  
Vol 28 (9) ◽  
pp. 832 ◽  
Author(s):  
P.M. Enquist ◽  
D.B. Slater ◽  
P.A. Sekula-Moise ◽  
S.M. Vernon ◽  
V.E. Haven ◽  
...  
Keyword(s):  
High Speed ◽  
Low Pressure ◽  
Vapour Phase ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour
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