Low-temperature optical and transport properties of Hg1-xMnxSe single crystals

1992 ◽  
Vol 7 (12) ◽  
pp. 1484-1488 ◽  
Author(s):  
O Zizic ◽  
Z V Popovic ◽  
V A Kulbachinskii ◽  
A Milutinovic
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Single Crystals

Low temperature electrical transport properties of RuO2 and IrO2 single crystals

2004 ◽  
Vol 16 (45) ◽  
pp. 8035-8041 ◽  
Author(s):  
J J Lin ◽  
S M Huang ◽  
Y H Lin ◽  
T C Lee ◽  
H Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Single Crystals ◽  
Electrical Transport ◽  
Electrical Transport Properties

Low temperature electrical transport properties in p-SnSe single crystals

2010 ◽  
Vol 53 (1) ◽  
pp. 10302 ◽  
Author(s):  
C. K. Sumesh ◽  
M. Patel ◽  
K. D. Patel ◽  
G. K. Solanki ◽  
V. M. Pathak ◽  
...  
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Single Crystals ◽  
Electrical Transport ◽  
Electrical Transport Properties

Low Temperature Transport Properties of Ru2Si3 Single Crystals

1995 ◽  
Vol 402 ◽  
Author(s):  
U. Gottlieb ◽  
R. Madar ◽  
O. Laborde
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Single Crystals ◽  
Room Temperature ◽  
Scaling Law ◽  
Band Model ◽  
Metal Insulator ◽  
Typical Behaviour ◽  
Two Band Model ◽  
Resistivity Behaviour

AbstractWe present here low temperature transport properties of Ru2Si3 single crystals. Below room temperature the resistivity behaviour of this material is extrinsic. The Hall coefficient is positive down to about 10 K and the becomes negative below. We explain this crossover with a two band model. At very low T, the magnetoresistance of our crystals shows the typical behaviour for a doped semiconductor on the metallic side of the metal-insulator transition and can be described by a scaling law characteristic for weak localisation with strong electronelectron interactions.

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