scholarly journals Method for correction of measured polarization angles from motional Stark effect spectroscopy for the effects of electric fields

2016 ◽  
Vol 58 (12) ◽  
pp. 125010 ◽  
Author(s):  
T C Luce ◽  
C C Petty ◽  
W H Meyer ◽  
C T Holcomb ◽  
K H Burrell ◽  
...  
1989 ◽  
Vol 63 (19) ◽  
pp. 2060-2063 ◽  
Author(s):  
F. M. Levinton ◽  
R. J. Fonck ◽  
G. M. Gammel ◽  
R. Kaita ◽  
H. W. Kugel ◽  
...  

2010 ◽  
Vol 81 (10) ◽  
pp. 10D739 ◽  
Author(s):  
J. D. King ◽  
M. A. Makowski ◽  
C. T. Holcomb ◽  
S. L. Allen ◽  
R. Geer ◽  
...  

2015 ◽  
Vol 10 (10) ◽  
pp. P10008-P10008 ◽  
Author(s):  
R.C. Wolf ◽  
A. Bock ◽  
O.P. Ford ◽  
R. Reimer ◽  
A. Burckhart ◽  
...  

2011 ◽  
Vol 82 (8) ◽  
pp. 086105 ◽  
Author(s):  
A. A. Lizunov ◽  
D. J. Den Hartog ◽  
A. S. Donin ◽  
A. A. Ivanov ◽  
V. V. Prikhodko

1999 ◽  
Vol 4 (S1) ◽  
pp. 357-362
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki

Identification of the electronic band structure in AlInGaN heterostructures is the key issue in high performance light emitter and switching devices. In device-typical GaInN/GaN multiple quantum well samples in a large set of variable composition a clear correspondence of transitions in photo- and electroreflection, as well as photoluminescence is found. The effective band offset across the GaN/GaInN/GaN piezoelectric heterointerface is identified and electric fields from 0.23 - 0.90 MV/cm are directly derived. In the bias voltage dependence a level splitting within the well is observed accompanied by the quantum confined Stark effect. We furthermore find direct correspondence of luminescence bands with reflectance features. This indicates the dominating role of piezoelectric fields in the bandstructure of such typical strained layers.


1978 ◽  
Vol 18 (3) ◽  
pp. 1103-1114 ◽  
Author(s):  
M. Rosenbluh ◽  
R. Panock ◽  
B. Lax ◽  
Terry A. Miller

1994 ◽  
Author(s):  
F. Paoletti ◽  
S. Batha ◽  
S. Bernabei ◽  
H. Fishman ◽  
R. Hatcher ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document