The gate, source, and drain electrodes of organic thin-film transistor(OTFT) to use as a
switching device for a flexible display was fabricated in microcontact printing process with hard
poly(dimethylsiloxane)(h-PDMS) stamp. The OTFT with thin-film dielectric layer of
parylene-C(4300Å, 5000Å, 6500Å, 7500Å, and 9000Å) were formed using special coating system,
and organic semiconductor layer was ink-jet printing process at room temperature. The microcontact
printing process using self-assembled monolayer(SAM) and h-PDMS stamp made it possible to
fabricate OTFT with channel length down to 600nm, fabricated thin film electrode of Au/Cr
(100nm/5nm), and reduced the fabrication process by 20steps compared with photolithography
process. Since the fabrication process was done in room temperature, there was no appeared such as
pattern shrinkage, pattern transformation and bending problem.