Effects of Si doping well beyond Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy

2021 ◽  
Author(s):  
Ravikiran Lingaparthi ◽  
Nethaji Dharmarasu ◽  
K Radhakrishnan ◽  
Y Zheng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Mott Transition ◽  
Si Doping

A New Si Doping Source for GaAs Growth by Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 2, No. 3B) ◽  
pp. L413-L416 ◽  
Author(s):  
Yoshiji Horikoshi ◽  
Mike R. Fahy ◽  
Minoru Kawashima ◽  
Kazuaki Furukawa ◽  
Masaie Fujino ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doping ◽  
New Si

scholarly journals Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

2013 ◽  
Vol 102 (22) ◽  
pp. 223105 ◽  
Author(s):  
Chloé Rolland ◽  
Philippe Caroff ◽  
Christophe Coinon ◽  
Xavier Wallart ◽  
Renaud Leturcq
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doping ◽  
Inas Nanowires

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

2012 ◽  
Vol 101 (3) ◽  
pp. 032109 ◽  
Author(s):  
Faiza Afroz Faria ◽  
Jia Guo ◽  
Pei Zhao ◽  
Guowang Li ◽  
Prem Kumar Kandaswamy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Low Resistance ◽  
Si Doping

Photoluminescence study of Si doping cubic GaN grown on (001) GaAs substrates by Molecular Beam Epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 420-424 ◽  
Author(s):  
Z.Q Li ◽  
H Chen ◽  
H.F Liu ◽  
L Wan ◽  
Q Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Study ◽  
Si Doping ◽  
Gaas Substrates ◽  
Cubic Gan

Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations

1993 ◽  
Vol 117-118 ◽  
pp. 387-392
Author(s):  
L. Pavesi ◽  
I. Harrison ◽  
F. Piazza ◽  
M. Henini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doping

scholarly journals Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy

2002 ◽  
Vol 81 (27) ◽  
pp. 5192-5194 ◽  
Author(s):  
Jeonghyun Hwang ◽  
William J. Schaff ◽  
Lester F. Eastman ◽  
Shawn T. Bradley ◽  
Leonard J. Brillson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Si Doping

Narrow Si doping distributions in 6-doped GaAs, Al0.3Ga0.7As and Quantum Wells grown by Gas Source Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
J.E. Cunningham ◽  
T.H. Chin ◽  
B. Tell ◽  
W. Jan ◽  
J. A. Ditzenberger ◽  
...  
Keyword(s):  
Activation Energy ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Atomic Diffusion ◽  
Si Doping ◽  
Gas Source ◽  
Capacitance Voltage

AbstractWe report very small interdiffusion and surface segregation of Si in δ-doped GaAs, A10.3Gao.7As and Quantum Wells grown at 580 C by Gas Source Molecular Beam Epitaxy. Capacitance-Voltage profiles of δ-doped layers are 38 Å wide for growth at 580 C and further, insignificant profile narrowing is observed at 530C and below. Much wider profiles are observed at equivalent substrate temperature for As4 growth. Atomic diffusion of Si in δ-doped Al0.3Ga0.7As is found to have a rate of D0=5× 10−cm2/sec with an activation energy of 1.8 eV.

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