Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

2012 ◽  
Vol 101 (3) ◽  
pp. 032109 ◽  
Author(s):  
Faiza Afroz Faria ◽  
Jia Guo ◽  
Pei Zhao ◽  
Guowang Li ◽  
Prem Kumar Kandaswamy ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Low Resistance ◽  
Si Doping

scholarly journals Very low resistance nonalloyed ohmic contacts using low‐temperature molecular beam epitaxy of GaAs

1995 ◽  
Vol 66 (11) ◽  
pp. 1412-1414 ◽  
Author(s):  
M. P. Patkar ◽  
T. P. Chin ◽  
J. M. Woodall ◽  
M. S. Lundstrom ◽  
M. R. Melloch
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Low Resistance

A New Si Doping Source for GaAs Growth by Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 2, No. 3B) ◽  
pp. L413-L416 ◽  
Author(s):  
Yoshiji Horikoshi ◽  
Mike R. Fahy ◽  
Minoru Kawashima ◽  
Kazuaki Furukawa ◽  
Masaie Fujino ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doping ◽  
New Si

scholarly journals Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

2013 ◽  
Vol 102 (22) ◽  
pp. 223105 ◽  
Author(s):  
Chloé Rolland ◽  
Philippe Caroff ◽  
Christophe Coinon ◽  
Xavier Wallart ◽  
Renaud Leturcq
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doping ◽  
Inas Nanowires

Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy

1981 ◽  
Vol 19 (3) ◽  
pp. 626-627 ◽  
Author(s):  
J. M. Woodall ◽  
J. L. Freeouf ◽  
G. D. Pettit ◽  
T. Jackson ◽  
P. Kirchner
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Graded Band Gap

Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

Nonalloyed Ohmic contacts ton‐GaAs by molecular beam epitaxy

1978 ◽  
Vol 33 (7) ◽  
pp. 651-653 ◽  
Author(s):  
P. A. Barnes ◽  
A. Y. Cho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Molecular Beam
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