Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer

2021 ◽  
Author(s):  
Muhammad Nawaz Sharif ◽  
Muhammad Usman ◽  
Mussaab Ibrahiam Niass ◽  
Juin J. Liou ◽  
Fang Wang ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Deep Ultraviolet

p-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode

2021 ◽  
Vol 158 ◽  
pp. 107022
Author(s):  
Muhammad Nawaz Sharif ◽  
Mussaab Ibrahim Niass ◽  
Juin J. Liou ◽  
Fang Wang ◽  
Yuhuai Liu
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diode ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Deep Ultraviolet

Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer

2013 ◽  
Vol 22 (10) ◽  
pp. 108505 ◽  
Author(s):  
Jian-Yong Xiong ◽  
Yi-Qin Xu ◽  
Fang Zhao ◽  
Jing-Jing Song ◽  
Bin-Bin Ding ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Light Emitting Diode ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

2014 ◽  
Vol 23 (6) ◽  
pp. 068502
Author(s):  
Xiang-Jing Zhuo ◽  
Jun Zhang ◽  
Dan-Wei Li ◽  
Han-Xiang Yi ◽  
Zhi-Wei Ren ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diode ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

Nearly Efficiency-Droop-Free AlGaN-Based Deep-Ultraviolet Light-Emitting Diode Without Electron-Blocking Layer

2020 ◽  
Vol 142 (3) ◽  
Author(s):  
Hongfeng Jia ◽  
Huabin Yu ◽  
Zhongjie Ren ◽  
Chong Xing ◽  
Zhongling Liu ◽  
...  
Keyword(s):  
Active Region ◽  
Ultraviolet Light ◽  
Light Output ◽  
Efficiency Droop ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Device Architecture ◽  
Duv Led ◽  
Deep Ultraviolet

Abstract An aluminum-rich AlGaN layer is commonly implemented to act as an electron-blocking layer (EBL) to block electron overflow from the active region in the conventional deep-ultraviolet light-emitting diodes (DUV LEDs). Herein, we propose a DUV LED device architecture with specially designed band-engineered quantum barriers (QBs) to “serve” as an alternative approach to alleviate such overflow effect, suppressing the electron leakage, and facilitating the electron and hole injection into the active region for efficient radiative recombination. Intriguingly, a much smaller efficiency droop with a significant enhancement of light output power (LOP) by nearly 50% can be achieved at the injection current level of 120 mA in such EBL-free device, in comparison with the conventional EBL-incorporated DUV LED structure. Thus, the EBL-free device architecture provides us an alternative path toward the realization of efficient DUV light emitters.

Enhanced Optical Power of InGaN/GaN Light-Emitting Diode by AlGaN Interlayer and Electron Blocking Layer

2012 ◽  
Vol 24 (22) ◽  
pp. 1991-1994 ◽  
Author(s):  
Sang-Jun Lee ◽  
Chu-Young Cho ◽  
Sang-Hyun Hong ◽  
Sang-Heon Han ◽  
Sukho Yoon ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Optical Power ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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