Continuum level-set model for anisotropic wet etching of patterned sapphire substrates

2021 ◽  
Vol 36 (4) ◽  
pp. 045016
Author(s):  
A Toifl ◽  
F Rodrigues ◽  
L F Aguinsky ◽  
A Hössinger ◽  
J Weinbub
Keyword(s):  
Level Set ◽  
Wet Etching ◽  
Sapphire Substrates ◽  
Level Set Model ◽  
Patterned Sapphire Substrates

Study on the morphology and shape control of volcano-shaped patterned sapphire substrates fabricated by imprinting and wet etching

CrystEngComm ◽  
2015 ◽  
Vol 17 (16) ◽  
pp. 3070-3075 ◽  
Author(s):  
S. X. Jiang ◽  
Z. Z. Chen ◽  
X. Z. Jiang ◽  
X. X. Fu ◽  
S. Jiang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Shape Control ◽  
Wet Etching ◽  
Patterned Sapphire Substrate ◽  
Sapphire Substrates ◽  
Novel Method ◽  
Patterned Sapphire Substrates

A novel method based on imprinting lithography and wet etching to fabricate a volcano-shaped patterned sapphire substrate (VPSS) is presented.

Fabrication Mechanism for Patterned Sapphire Substrates by Wet Etching

2014 ◽  
Vol 3 (5) ◽  
pp. N69-N74 ◽  
Author(s):  
Natsuko Aota ◽  
Hideo Aida ◽  
Yutaka Kimura ◽  
Yuki Kawamata ◽  
Michio Uneda
Keyword(s):  
Wet Etching ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

scholarly journals Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Hsu-Hung Hsueh ◽  
Sin-Liang Ou ◽  
Chiao-Yang Cheng ◽  
Dong-Sing Wuu ◽  
Ray-Hua Horng
Keyword(s):  
Light Emitting Diodes ◽  
Substrate Surface ◽  
Light Output ◽  
Chemical Vapor ◽  
Wet Etching ◽  
Light Output Power ◽  
Light Emitting ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition. To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the PSSs were further modified using wet etching. Through the wet etching treatment, some dry-etched induced damage on the substrate surface formed in the PSS fabrication process can be removed to achieve a high epilayer quality. In comparison to the LEDs prepared on the conventional sapphire substrate (CSS) and cone-shaped PSS without wet etching, the LED grown on the cone-shaped PSS by performing wet etching for 3 min exhibited 55% and 10% improvements in the light output power (at 350 mA), respectively. This implies that the modification of cone-shaped PSSs possesses high potential for LED applications.

The growth behaviors and high controllability of GaN nanostructures on stripe-patterned sapphire substrates

2021 ◽  
pp. 149725
Author(s):  
Pengkun Li ◽  
Lilin Wang ◽  
Shujing Sun ◽  
Chaoyang Tu ◽  
Chenlong Chen
Keyword(s):  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Stress evolution in AlN growth on nano-patterned sapphire substrates

2019 ◽  
Vol 13 (1) ◽  
pp. 015504
Author(s):  
Nan Xie ◽  
Fujun Xu ◽  
Jiaming Wang ◽  
Yuanhao Sun ◽  
Baiyin Liu ◽  
...  
Keyword(s):  
Stress Evolution ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

scholarly journals Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

2013 ◽  
Vol 43 (4) ◽  
pp. 814-818 ◽  
Author(s):  
E. Richter ◽  
S. Fleischmann ◽  
D. Goran ◽  
S. Hagedorn ◽  
W. John ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

2006 ◽  
Vol 203 (7) ◽  
pp. 1632-1635 ◽  
Author(s):  
K. Nakano ◽  
M. Imura ◽  
G. Narita ◽  
T. Kitano ◽  
Y. Hirose ◽  
...  
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Sapphire Substrates ◽  
Lateral Overgrowth ◽  
Patterned Sapphire Substrates

High Quality AlN Layer Grown on Patterned Sapphire Substrates by Hydride Vapor-Phase Epitaxy: A Route for Cost Efficient AlN Templates for Deep Ultraviolet Light Devices

2021 ◽  
Vol 21 (9) ◽  
pp. 4881-4885
Author(s):  
Seung-Jae Lee ◽  
Seong-Ran Jeon ◽  
Young Ho Song ◽  
Young-Jun Choi ◽  
Hae-Gon Oh ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Order Of Magnitude ◽  
Cost Efficient ◽  
Patterned Sapphire Substrates

We report the characteristics of AlN epilayers grown directly on cylindrical-patterned sapphire substrates (CPSS) by hydride vapor-phase epitaxy (HVPE). To evaluate the effect of CPSS, we analyzed the threading dislocation densities (TDDs) of AlN films grown simultaneously on CPSS and flat sapphire substrate (FSS) by transmission electron microscopy (TEM). The corresponding TDD is measured to be 5.69 x 108 cm−2 for the AlN sample grown on the CPSS that is almost an order of magnitude lower than the value of 3.43 × 109 cm−2 on the FSS. The CPSS contributes to reduce the TDs originated from the AlN/sapphire interface via bending the TDs by lateral growth during the coalescence process. In addition, the reduction of direct interface area between AlN and sapphire by CPSS reduce the generation of TDs.

Development of high efficient ultraviolet LEDs on hybrid patterned sapphire substrates

2021 ◽  
Author(s):  
Huabin Yu ◽  
Hongfeng Jia ◽  
Zhongling Liu ◽  
Muhammad Memon ◽  
Meng Tian ◽  
...  
Keyword(s):  
Sapphire Substrates ◽  
High Efficient ◽  
Patterned Sapphire Substrates
Sign in / Sign up

Export Citation Format

Share Document