High Quality AlN Layer Grown on Patterned Sapphire Substrates by Hydride Vapor-Phase Epitaxy: A Route for Cost Efficient AlN Templates for Deep Ultraviolet Light Devices

2021 ◽  
Vol 21 (9) ◽  
pp. 4881-4885
Author(s):  
Seung-Jae Lee ◽  
Seong-Ran Jeon ◽  
Young Ho Song ◽  
Young-Jun Choi ◽  
Hae-Gon Oh ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Order Of Magnitude ◽  
Cost Efficient ◽  
Patterned Sapphire Substrates

We report the characteristics of AlN epilayers grown directly on cylindrical-patterned sapphire substrates (CPSS) by hydride vapor-phase epitaxy (HVPE). To evaluate the effect of CPSS, we analyzed the threading dislocation densities (TDDs) of AlN films grown simultaneously on CPSS and flat sapphire substrate (FSS) by transmission electron microscopy (TEM). The corresponding TDD is measured to be 5.69 x 108 cm−2 for the AlN sample grown on the CPSS that is almost an order of magnitude lower than the value of 3.43 × 109 cm−2 on the FSS. The CPSS contributes to reduce the TDs originated from the AlN/sapphire interface via bending the TDs by lateral growth during the coalescence process. In addition, the reduction of direct interface area between AlN and sapphire by CPSS reduce the generation of TDs.

scholarly journals Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates

2013 ◽  
Vol 43 (4) ◽  
pp. 814-818 ◽  
Author(s):  
E. Richter ◽  
S. Fleischmann ◽  
D. Goran ◽  
S. Hagedorn ◽  
W. John ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

scholarly journals Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 605 ◽  
Author(s):  
Chi-Tsung Tasi ◽  
Wei-Kai Wang ◽  
Tsung-Yen Tsai ◽  
Shih-Yung Huang ◽  
Ray-Hua Horng ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

scholarly journals Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 704 ◽  
Author(s):  
Chi-Tsung Tasi ◽  
Wei-Kai Wang ◽  
Sin-Liang Ou ◽  
Shih-Yung Huang ◽  
Ray-Hua Horng ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Al Content ◽  
Atomic Force ◽  
Transmission Electron ◽  
Biaxial Tensile Stress

In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE). The crystalline quality, surface morphology, microstructure, and stress state of the AlGaN/AlN/NPSS epilayers were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The results indicate that the crystal quality of the AlGaN film could be improved when grown on the AlN/NPSS template. The screw threading dislocation (TD) density was reduced to 1.4 × 109 cm−2 for the AlGaN epilayer grown on the AlN/NPSS template, which was lower than that of the sample grown on a flat c-plane sapphire substrate (6.3 × 109 cm−2). As examined by XRD measurements, the biaxial tensile stress of the AlGaN film was significantly reduced from 1,187 MPa (on AlN/NPSS) to 38.41 MPa (on flat c-plane sapphire). In particular, an increase of the Al content in the overgrown AlGaN layer was confirmed by the TEM observation. This could be due to the relaxation of the in-plane stress through the AlGaN and AlN/NPSS template interface.

Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 5 (9) ◽  
pp. 095503 ◽  
Author(s):  
Keisuke Yamane ◽  
Motohisa Ueno ◽  
Katsumi Uchida ◽  
Hiroshi Furuya ◽  
Narihito Okada ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Semipolar Gan ◽  
Patterned Sapphire Substrates

Metalorganic vapor phase epitaxy and structural characterization of InP on Si(111)

1996 ◽  
Vol 74 (S1) ◽  
pp. 108-111 ◽  
Author(s):  
Y. Ababou ◽  
P. Desjardins ◽  
R. A. Masut ◽  
A. Yelon ◽  
G. L'Espérance
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Average Dislocation Density ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Reaction Constant ◽  
Antiphase Domains

We report the growth of InP layers using low-pressure metalorganic vapor phase epitaxy on buffered HF-treated Si(111) surfaces, both normally oriented and 3.8° off, toward [Formula: see text]. The InP layers grown on normally oriented Si(111) show the presence of roughly regular terraces, which may be associated with antiphase domains, whose width increases rapidly with the epilayer thickness. The average dislocation density at the top surface is as low as 4 × 105 cm−2 for 4.8 μm thick epilayers. Transmission electron microscopy observations show a rapid decrease of threading dislocation densities with increasing distance from the interface, due principally to their coalescence, as determined from X-ray diffraction analysis. This indicates a high reaction constant between dislocations, of 1.8 × 10−5 cm.

Halide Vapor Phase Epitaxy α‐ and ε‐Ga 2 O 3 Epitaxial Films Grown on Patterned Sapphire Substrates

2020 ◽  
Vol 217 (14) ◽  
pp. 1900892 ◽  
Author(s):  
Sevastian Shapenkov ◽  
Oleg Vyvenko ◽  
Evgeny Ubyivovk ◽  
Oleg Medvedev ◽  
Georgiy Varygin ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Epitaxial Films ◽  
Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates
Sign in / Sign up

Export Citation Format

Share Document