Low-frequency noise characterization of AlGaN/GaN HEMTs with and without a p-GaN gate layer

2021 ◽  
Author(s):  
Shih-Sheng Yang ◽  
Yue-Ming Hsin
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemts ◽  
Noise Characterization ◽  
Gate Layer

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs under UV Illumination

2020 ◽  
pp. 1-1
Author(s):  
Venkatesan Nagarajan ◽  
Kun-Ming Chen ◽  
Hsin-Yi Lin ◽  
Hsin-Hui Hu ◽  
Guo-Wei Huang ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Uv Illumination ◽  
Gan Hemts ◽  
Noise Characterization

Using low-frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction

2004 ◽  
Author(s):  
Jean-Guy Tartarin ◽  
Geoffroy Soubercaze-Pun ◽  
Abdelali Rennane ◽  
Laurent Bary ◽  
Robert Plana ◽  
...  
Keyword(s):  
Technology Assessment ◽  
Low Frequency ◽  
Failure Prediction ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gan Hemt ◽  
Noise Characterization

Low-frequency noise characterization of n- and p-MOSFET's with ultrathin oxynitride gate films

1996 ◽  
Vol 17 (8) ◽  
pp. 395-397 ◽  
Author(s):  
P. Morfouli ◽  
G. Ghibaudo ◽  
T. Ouisse ◽  
E. Vogel ◽  
W. Hill ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characterization

Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer nMOSFETs

2015 ◽  
Vol 36 (12) ◽  
pp. 1355-1358 ◽  
Author(s):  
Maryam Olyaei ◽  
Eugenio Dentoni Litta ◽  
Per-Erik Hellstrom ◽  
Mikael Ostling ◽  
Bengt Gunnar Malm
Keyword(s):  
Interfacial Layer ◽  
Low Frequency ◽  
Oxide Thickness ◽  
Frequency Noise ◽  
Equivalent Oxide Thickness ◽  
Low Frequency Noise ◽  
Noise Characterization
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