scholarly journals The dominance of non-electron-phonon charge carrier interaction in highly-compressed superhydrides

Author(s):  
Evgeny F Talantsev
2011 ◽  
Vol 161 (21-22) ◽  
pp. 2241-2248 ◽  
Author(s):  
A. Konkin ◽  
C. Bounioux ◽  
U. Ritter ◽  
P. Scharff ◽  
E.A. Katz ◽  
...  

1972 ◽  
Vol 54 (1) ◽  
pp. 61-65 ◽  
Author(s):  
E. L: Frankevich ◽  
I. A. Sokolik ◽  
L. V. Lukin

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1306
Author(s):  
Evgueni F. Talantsev

The mechanism of charge carrier interaction in twisted bilayer graphene (TBG) remains an unresolved problem, where some researchers proposed the dominance of the electron–phonon interaction, while the others showed evidence for electron–electron or electron–magnon interactions. Here we propose to resolve this problem by generalizing the Bloch–Grüneisen equation and using it for the analysis of the temperature dependent resistivity in TBG. It is a well-established theoretical result that the Bloch–Grüneisen equation power-law exponent, p, exhibits exact integer values for certain mechanisms. For instance, p = 5 implies the electron–phonon interaction, p = 3 is associated with the electron–magnon interaction and p = 2 applies to the electron–electron interaction. Here we interpret the linear temperature-dependent resistance, widely observed in TBG, as p→1, which implies the quasielastic charge interaction with acoustic phonons. Thus, we fitted TBG resistance curves to the Bloch–Grüneisen equation, where we propose that p is a free-fitting parameter. We found that TBGs have a smoothly varied p-value (ranging from 1.4 to 4.4) depending on the Moiré superlattice constant, λ, or the charge carrier concentration, n. This implies that different mechanisms of the charge carrier interaction in TBG superlattices smoothly transition from one mechanism to another depending on, at least, λ and n. The proposed generalized Bloch–Grüneisen equation is applicable to a wide range of disciplines, including superconductivity and geology.


1998 ◽  
Vol 58 (14) ◽  
pp. 9385-9389 ◽  
Author(s):  
M. Scavini ◽  
P. Ghigna ◽  
G. Spinolo ◽  
U. Anselmi Tamburini ◽  
G. Chiodelli ◽  
...  

1973 ◽  
Vol 20 (1) ◽  
pp. 403-410 ◽  
Author(s):  
J. Kalinowski ◽  
J. Godlewski

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4322
Author(s):  
Evgueni Talantsev

Since the pivotal experimental discovery of near-room-temperature superconductivity (NRTS) in highly compressed sulphur hydride by Drozdov et al. (Nature 2015, 525, 73–76), more than a dozen binary and ternary hydrogen-rich phases exhibiting superconducting transitions above 100 K have been discovered to date. There is a widely accepted theoretical point of view that the primary mechanism governing the emergence of superconductivity in hydrogen-rich phases is the electron–phonon pairing. However, the recent analysis of experimental temperature-dependent resistance, R(T), in H3S, LaHx, PrH9 and BaH12 (Talantsev, Supercond. Sci. Technol. 2021, 34, accepted) showed that these compounds exhibit the dominance of non-electron–phonon charge carrier interactions and, thus, it is unlikely that the electron–phonon pairing is the primary mechanism for the emergence of superconductivity in these materials. Here, we use the same approach to reveal the charge carrier interaction in highly compressed lithium, black phosphorous, sulfur, and silane. We found that all these superconductors exhibit the dominance of non-electron–phonon charge carrier interaction. This explains the failure to demonstrate the high-Tc values that are predicted for these materials by first-principles calculations which utilize the electron–phonon pairing as the mechanism for the emergence of their superconductivity. Our result implies that alternative pairing mechanisms (primarily the electron–electron retraction) should be tested within the first-principles calculations approach as possible mechanisms for the emergence of superconductivity in highly compressed lithium, black phosphorous, sulfur, and silane.


2006 ◽  
Vol 32 (7) ◽  
pp. 683-688 ◽  
Author(s):  
I. B. Berkutov ◽  
Yu. F. Komnik ◽  
V. V. Andrievskii ◽  
O. A. Mironov ◽  
M. Myronov ◽  
...  

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