scholarly journals Ultrafast spin dynamics in inhomogeneous systems: a density-matrix approach applied to Co/Cu interfaces

Author(s):  
Franziska Töpler ◽  
Juergen Henk ◽  
Ingrid Mertig
1999 ◽  
Vol 571 ◽  
Author(s):  
Ulrich Hohenesteri ◽  
Fausto Rossi ◽  
Elisa Molinari

ABSTRACTWe present a density-matrix approach for the description of nonequilibrium carrier dynamics in optically excited semiconductor quantum dots, that explicitly accounts for exciton-exciton as well as exciton-carrier interactions. Within this framework, we analyze few-particle effects in the optical spectra and provide a consistent description of additional peaks appearing at high photoexcitation density. We discuss possible applications of such optical nonlinearities in future coherent-control experiments.


Open Physics ◽  
2006 ◽  
Vol 4 (2) ◽  
Author(s):  
Gerard Czajkowski ◽  
Leonardo Silvestri

AbstractWe show how to compute the optical response of a Quantum Disk (QDisk) to an electromagnetic wave as a function of the incident wave polarization, in the energetic region of interband transitions. Both the TM and TE polarization in guided-wave geometry are analyzed. The method uses the microscopic calculation of Quantum Disk eigenfunctions and the macroscopic real density matrix approach to compute the effective QDisk susceptibility, taking into account the valence band structure of the QDisk material and the Coulomb interaction between the electron and the hole. Analytical expressions for the QDisk susceptibility are obtained for a certain model electron — hole potential. Using these expressions, all optical functions can be computed. Results for the absorption coefficient are computed for InAs/GaAs QDisks. Fair agreement with experiments is obtained.


2009 ◽  
Vol 16 (01) ◽  
pp. 11-17
Author(s):  
L. ZHANG

Based on the density-matrix approach and iterative treatment, a detailed procedure for the calculation of the linear and nonlinear intersubband refractive index changes (RICs) in wurtzite GaN-based coupling quantum wells (CQWs) is given. The simple analytical formulas for electronic eigenstates and the linear and third-order nonlinear RICs in the systems are also deduced. Numerical result on a typical AlGaN / GaN CQW shows that the linear and nonlinear RICs sensitively depend on the structural parameters of the CQW system as well as the doped fraction of nitride semicondutor.


1989 ◽  
Vol 160 (3) ◽  
pp. 393-399 ◽  
Author(s):  
K. Ruebenbauer ◽  
B. Miczko ◽  
T. Birchall

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