Temperature and hydrostatic pressure effects on the electronic structure, optical properties of spherical segment quantum dot/wetting layer and group velocity of light

Laser Physics ◽  
2020 ◽  
Vol 30 (5) ◽  
pp. 055402
Author(s):  
Z Ghafarizadeh Jahromi ◽  
M Dezhkam
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Quantum Dot ◽  
Group Velocity ◽  
Spherical Segment ◽  
Pressure Effects ◽  
Wetting Layer ◽  
Velocity Of Light

scholarly journals Electronic structure and magnetic properties of RT4Al8(R = Sc, Y, La, Lu; T = Fe, Mn, Cr) compounds. Hydrostatic pressure effects

2016 ◽  
Vol 42 (6) ◽  
pp. 458-465 ◽  
Author(s):  
I. P. Zhuravleva ◽  
G. E. Grechnev ◽  
A. S. Panfilov ◽  
A. A. Lyogenkaya ◽  
O. V. Kotlyar ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Pressure Effects

scholarly journals Quantum Confined Stark Effect on the Linear and Nonlinear Optical Properties of SiGe/Si Semi Oblate and Prolate Quantum Dots Grown in Si Wetting Layer

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1513
Author(s):  
Varsha ◽  
Mohamed Kria ◽  
Jawad El Hamdaoui ◽  
Laura M. Pérez ◽  
Vinod Prasad ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Dot ◽  
Electric Field ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Wetting Layer ◽  
Non Linear ◽  
Linear Optical Properties ◽  
Linear Optical

We have studied the parallel and perpendicular electric field effects on the system of SiGe prolate and oblate quantum dots numerically, taking into account the wetting layer and quantum dot size effects. Using the effective-mass approximation in the two bands model, we computationally calculated the extensive variation of dipole matrix (DM) elements, bandgap and non-linear optical properties, including absorption coefficients, refractive index changes, second harmonic generation and third harmonic generation as a function of the electric field, wetting layer size and the size of the quantum dot. The redshift is observed for the non-linear optical properties with the increasing electric field and an increase in wetting layer thickness. The sensitivity to the electric field toward the shape of the quantum dot is also observed. This study is resourceful for all the researchers as it provides a pragmatic model by considering oblate and prolate shaped quantum dots by explaining the optical and electronic properties precisely, as a consequence of the confined stark shift and wetting layer.

Hydrostatic pressure effects onto the electronic structure and differential capacitance profile for a metal/δ-doped-GaAs.

2012 ◽  
Vol 1479 ◽  
pp. 139-143
Author(s):  
A. Puga ◽  
J. C. Martínez-Orozco
Keyword(s):  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Effective Mass ◽  
Energy Levels ◽  
Differential Capacitance ◽  
Pressure Effects ◽  
Mass Approximation ◽  
Linear Behavior ◽  
Experimental Expression ◽  
Semiconductor Contact

ABSTRACTA metal-semiconductor contact with a n-type δ-doped quantum well of impurities (metal/δ-doped GaAs) was studied numerically to extract electronic properties such as energy levels and the corresponding wave functions of each level as well as the differential capacitance for the structure. In this work we reported these properties as a function of the hydrostatic pressure (p). We used the effective mass approximation for the calculation of the electronic structure and consider the hydrostatic pressure effects on the basic semiconductor parameters as is the effective mass for the conduction electrons and the static dielectric constant, finally we also take into account an experimental expression that dependency of the Schottky barrier height as a function of this external factor, at least for values between 0 and 6 kar. We showed that the linear behavior for C−2, obtained by pervious works, is switched over a parabolic-like curve due to the δ-doped two-dimensional impurities density.

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