Kink effect in current—voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

High Electron ◽

High Electron Mobility ◽

Kink Effect ◽

Current Voltage ◽

On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2279158 ◽

2013 ◽

Vol 60 (10) ◽

pp. 3351-3357 ◽

Cited By ~ 19

Author(s):

Janesh K. Kaushik ◽

V. Raman Balakrishnan ◽

Brishbhan Singh Panwar ◽

Rangarajan Muralidharan

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Kink Effect ◽

Current Voltage ◽

Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications

Proceedings of International Electron Devices Meeting ◽

10.1109/iedm.1995.499219 ◽

2002 ◽

Cited By ~ 7

Author(s):

K.J. Chen ◽

K. Maezawa ◽

M. Yamamoto

Keyword(s):

Electron Mobility ◽

Resonant Tunneling ◽

High Electron ◽

High Electron Mobility ◽

Current Voltage ◽

Novel current–voltage characteristics in an InP‐based resonant‐tunneling high electron mobility transistor

Applied Physics Letters ◽

10.1063/1.115333 ◽

1995 ◽

Vol 67 (24) ◽

pp. 3608-3610 ◽

Cited By ~ 22

Author(s):

K. J. Chen ◽

K. Maezawa ◽

M. Yamamoto

Keyword(s):

Electron Mobility ◽

Resonant Tunneling ◽

High Electron ◽

High Electron Mobility ◽

Current Voltage ◽

Gate-metal formation-related kink effect and gate current on In0.5Al0.5As∕In0.5Ga0.5As metamorphic high electron mobility transistor performance

Applied Physics Letters ◽

10.1063/1.2222259 ◽

2006 ◽

Vol 89 (3) ◽

pp. 033509 ◽

Cited By ~ 13

Author(s):

M. K. Hsu ◽

H. R. Chen ◽

S. Y. Chiou ◽

W. T. Chen ◽

G. H. Chen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Gate Current ◽

Kink Effect

Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.020301 ◽

2015 ◽

Vol 54 (2) ◽

pp. 020301 ◽

Cited By ~ 5

Author(s):

Toshiharu Kubo ◽

Joseph J. Freedsman ◽

Yusuke Yoshida ◽

Takashi Egawa

Keyword(s):

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Layer Deposition ◽

Current Voltage ◽

Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105, 172105 (2014)]

Applied Physics Letters ◽

10.1063/1.4921965 ◽

2015 ◽

Vol 106 (21) ◽

pp. 219902

Author(s):

Burcu Ozden ◽

Chungman Yang ◽

Fei Tong ◽

Min P. Khanal ◽

Vahid Mirkhani ◽

...

Keyword(s):

Electron Mobility ◽

Ultra Violet ◽

High Electron ◽

High Electron Mobility ◽

Current Voltage ◽

Photo Current

A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor

Acta Physica Sinica ◽

10.7498/aps.61.047301 ◽

2012 ◽

Vol 61 (4) ◽

pp. 047301

Author(s):

Ma Ji-Gang ◽

Ma Xiao-Hua ◽

Zhang Hui-Long ◽

Cao Meng-Yi ◽

Zhang Kai ◽

...

Keyword(s):

Electron Mobility ◽

Semiempirical Model ◽

High Electron ◽

High Electron Mobility ◽

Kink Effect

Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor

Journal of Applied Physics ◽

10.1063/5.0066036 ◽

2021 ◽

Vol 130 (20) ◽

pp. 205707

Author(s):

Ramdas P. Khade ◽

Sujan Sarkar ◽

Amitava DasGupta ◽

Nandita DasGupta

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Kink Effect

An analytical current-voltage characteristics model for high electron mobility transistors based on nonlinear charge-control formulation

IEEE Transactions on Electron Devices ◽

10.1109/16.40914 ◽

1989 ◽

Vol 36 (10) ◽

pp. 2299-2306 ◽

Cited By ~ 26

Author(s):

A.-J. Shey ◽

W.H. Ku

Keyword(s):

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Charge Control ◽

Current Voltage ◽

Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2012.07.026 ◽

2012 ◽

Vol 46 ◽

pp. 174-176 ◽

Cited By ~ 1

Author(s):

A. Asgari ◽

N. Fazli

Keyword(s):

Quantum Dot ◽

Electron Mobility ◽

High Electron ◽

High Electron Mobility ◽

Current Voltage ◽