Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV3Sb5

2021 ◽  
Author(s):  
FangHang Yu ◽  
XiKai Wen ◽  
ZhiGang Gui ◽  
Tao Wu ◽  
Zhenyu Wang ◽  
...  

Abstract Controlling the anomalous Hall effect (AHE) inspires potential applications of quantum materials in the next generation of electronics. The recently discovered quasi-2D kagome superconductor CsV3Sb5 exhibits large AHE accompanying with the charge-density-wave (CDW) order which provides us an ideal platform to study the interplay among nontrivial band topology, CDW, and unconventional superconductivity. Here, we systematically investigated the pressure effect of the AHE in CsV3Sb5. Our high-pressure transport measurements confirm the concurrence of AHE and CDW in the compressed CsV3Sb5. Remarkably, distinct from the negative AHE at ambient pressure, a positive anomalous Hall resistivity sets in below 35 K with pressure around 0.75 GPa, which can be attributed to the Fermi surface reconstruction and/or Fermi energy shift in the new CDW phase under pressure. Our work indicates that the anomalous Hall effect in CsV3Sb5 is tunable and highly related to the band structure.

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Z. Y. Liu ◽  
J. Li ◽  
J. F. Zhang ◽  
J. Li ◽  
P. T. Yang ◽  
...  

AbstractHfTe3 single crystal undergoes a charge-density-wave (CDW) transition at TCDW = 93 K without the appearance of superconductivity (SC) down to 50 mK at ambient pressure. Here, we determined its CDW vector q = 0.91(1) a* + 0.27(1) c* via low-temperature transmission electron microscope and then performed comprehensive high-pressure transport measurements along three major crystallographic axes. Our results indicate that the superconducting pairing starts to occur within the quasi-one-dimensional (Q1D) -Te2-Te3- chain at 4–5 K but the phase coherence between the superconducting chains cannot be realized along either the b- or c-axis down to at least 1.4 K, giving rise to an extremely anisotropic SC rarely seen in real materials. We have discussed the prominent Q1D SC in pressurized HfTe3 in terms of the anisotropic Fermi surfaces arising from the unidirectional Te-5px electronic states and the local pairs formed along the -Te2-Te3- chains based on the first-principles electronic structure calculations.


2021 ◽  
Vol 104 (4) ◽  
Author(s):  
F. H. Yu ◽  
T. Wu ◽  
Z. Y. Wang ◽  
B. Lei ◽  
W. Z. Zhuo ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Guolin Zheng ◽  
Maoyuan Wang ◽  
Xiangde Zhu ◽  
Cheng Tan ◽  
Jie Wang ◽  
...  

AbstractDzyaloshinskii–Moriya interaction (DMI) is vital to form various chiral spin textures, novel behaviors of magnons and permits their potential applications in energy-efficient spintronic devices. Here, we realize a sizable bulk DMI in a transition metal dichalcogenide (TMD) 2H-TaS2 by intercalating Fe atoms, which form the chiral supercells with broken spatial inversion symmetry and also act as the source of magnetic orderings. Using a newly developed protonic gate technology, gate-controlled protons intercalation could further change the carrier density and intensely tune DMI via the Ruderman–Kittel–Kasuya–Yosida mechanism. The resultant giant topological Hall resistivity $${\rho }_{{xy}}^{T}$$ ρ x y T of $$1.41{\mathrm{\mu}} \Omega \cdot {{\mathrm{cm}}}$$ 1.41 μ Ω ⋅ cm at $${V}_{g}=-5.2{\mathrm{V}}$$ V g = − 5.2 V (about $$424 \%$$ 424 % larger than the zero-bias value) is larger than most known chiral magnets. Theoretical analysis indicates that such a large topological Hall effect originates from the two-dimensional Bloch-type chiral spin textures stabilized by DMI, while the large anomalous Hall effect comes from the gapped Dirac nodal lines by spin–orbit interaction. Dual-intercalation in 2H-TaS2 provides a model system to reveal the nature of DMI in the large family of TMDs and a promising way of gate tuning of DMI, which further enables an electrical control of the chiral spin textures and related electromagnetic phenomena.


2020 ◽  
Author(s):  
Guolin Zheng ◽  
Maoyuan Wang ◽  
Xiangde Zhu ◽  
Cheng Tan ◽  
Jie Wang ◽  
...  

Abstract Dzyaloshinskii-Moriya interaction (DMI) is vital to form various chiral spin textures, novel behaviors of magnons and permits their potential applications in energy-efficient spintronic devices. Here, we realize a sizable bulk DMI in a transition metal dichalcogenide (TMD) 2H-TaS2 by intercalating Fe atoms, which form the chiral supercells with broken spatial inversion symmetry and also act as the source of magnetic orderings. Using a newly developed protonic gate technology, gate-controlled protons intercalation could further change the carrier density and intensely tune DMI via the Ruderman-Kittel-Kasuya-Yosida mechanism. The resultant giant topological Hall resistivity ρxyT of 1.4 μΩ∙cm at Vg=-5.2 V (about 460% of the zero-bias value) is larger than most of the known magnetic materials. Theoretical analysis indicates that such a large topological Hall effect originates from the two-dimensional Bloch-type chiral spin textures stabilized by DMI, while the large anomalous Hall effect comes from the gapped Dirac nodal lines by spin-orbit interaction. Dual-intercalation in 2H-TaS2 provides a model system to reveal the nature of DMI in the large family of TMDs and a promising way of gate tuning of DMI, which further enables an electrical control of the chiral spin textures and related electromagnetic phenomena.


2020 ◽  
Vol 4 (5) ◽  
Author(s):  
R. D. dos Reis ◽  
M. Ghorbani Zavareh ◽  
M. O. Ajeesh ◽  
L. O. Kutelak ◽  
A. S. Sukhanov ◽  
...  

2020 ◽  
Vol 4 (4) ◽  
Author(s):  
Z. Y. Liu ◽  
T. Zhang ◽  
S. X. Xu ◽  
P. T. Yang ◽  
Q. Wang ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.


2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document