Pressure effect on the anomalous Hall effect of ferromagnetic Weyl semimetal Co3Sn2S2

2020 ◽  
Vol 4 (4) ◽  
Author(s):  
Z. Y. Liu ◽  
T. Zhang ◽  
S. X. Xu ◽  
P. T. Yang ◽  
Q. Wang ◽  
...  
2021 ◽  
Vol 103 (11) ◽  
Author(s):  
Hung-Yu Yang ◽  
Bahadur Singh ◽  
Jonathan Gaudet ◽  
Baozhu Lu ◽  
Cheng-Yi Huang ◽  
...  

2019 ◽  
Vol 114 (9) ◽  
pp. 092403 ◽  
Author(s):  
K. Geishendorf ◽  
R. Schlitz ◽  
P. Vir ◽  
C. Shekhar ◽  
C. Felser ◽  
...  

2021 ◽  
Author(s):  
FangHang Yu ◽  
XiKai Wen ◽  
ZhiGang Gui ◽  
Tao Wu ◽  
Zhenyu Wang ◽  
...  

Abstract Controlling the anomalous Hall effect (AHE) inspires potential applications of quantum materials in the next generation of electronics. The recently discovered quasi-2D kagome superconductor CsV3Sb5 exhibits large AHE accompanying with the charge-density-wave (CDW) order which provides us an ideal platform to study the interplay among nontrivial band topology, CDW, and unconventional superconductivity. Here, we systematically investigated the pressure effect of the AHE in CsV3Sb5. Our high-pressure transport measurements confirm the concurrence of AHE and CDW in the compressed CsV3Sb5. Remarkably, distinct from the negative AHE at ambient pressure, a positive anomalous Hall resistivity sets in below 35 K with pressure around 0.75 GPa, which can be attributed to the Fermi surface reconstruction and/or Fermi energy shift in the new CDW phase under pressure. Our work indicates that the anomalous Hall effect in CsV3Sb5 is tunable and highly related to the band structure.


APL Materials ◽  
2020 ◽  
Vol 8 (1) ◽  
pp. 011111 ◽  
Author(s):  
Hung-Yu Yang ◽  
Bahadur Singh ◽  
Baozhu Lu ◽  
Cheng-Yi Huang ◽  
Faranak Bahrami ◽  
...  

2020 ◽  
Vol 32 (4) ◽  
pp. 1612-1617 ◽  
Author(s):  
Gohil S. Thakur ◽  
Praveen Vir ◽  
Satya N. Guin ◽  
Chandra Shekhar ◽  
Richard Weihrich ◽  
...  

APL Materials ◽  
2019 ◽  
Vol 7 (5) ◽  
pp. 051110 ◽  
Author(s):  
Biao Meng ◽  
Hao Wu ◽  
Yang Qiu ◽  
Chunlei Wang ◽  
Yong Liu ◽  
...  

2020 ◽  
pp. 2000067
Author(s):  
Denis Dyck ◽  
Andreas Becker ◽  
Jungwoo Koo ◽  
Tristan Matalla-Wagner ◽  
Jan Krieft ◽  
...  

Science ◽  
2019 ◽  
Vol 365 (6459) ◽  
pp. 1282-1285 ◽  
Author(s):  
D. F. Liu ◽  
A. J. Liang ◽  
E. K. Liu ◽  
Q. N. Xu ◽  
Y. W. Li ◽  
...  

Weyl semimetals are crystalline solids that host emergent relativistic Weyl fermions and have characteristic surface Fermi-arcs in their electronic structure. Weyl semimetals with broken time reversal symmetry are difficult to identify unambiguously. In this work, using angle-resolved photoemission spectroscopy, we visualized the electronic structure of the ferromagnetic crystal Co3Sn2S2 and discovered its characteristic surface Fermi-arcs and linear bulk band dispersions across the Weyl points. These results establish Co3Sn2S2 as a magnetic Weyl semimetal that may serve as a platform for realizing phenomena such as chiral magnetic effects, unusually large anomalous Hall effect and quantum anomalous Hall effect.


2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Yao Zhang ◽  
Yuefeng Yin ◽  
Guy Dubuis ◽  
Tane Butler ◽  
Nikhil V. Medhekar ◽  
...  

AbstractMagnetic Weyl semimetals with spontaneously broken time-reversal symmetry exhibit a large intrinsic anomalous Hall effect originating from the Berry curvature. To employ this large Hall current for room temperature topo-spintronics applications, it is necessary to fabricate these materials as thin or ultrathin films. Here, we experimentally demonstrate that Weyl semimetal Co2MnGa thin films (20–50 nm) show a large anomalous Hall angle ~11.4% at low temperature and ~9.7% at room temperature, which can be ascribed to the non-trivial topology of the band structure with large intrinsic Berry curvature. However, the anomalous Hall angle decreases significantly with thicknesses below 20 nm, which band structure calculations confirm is due to the reduction of the majority spin contribution to the Berry curvature. Our results suggest that Co2MnGa is an excellent material to realize room temperature topo-spintronics applications; however, the significant thickness dependence of the Berry curvature has important implications for thin-film device design.


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