Dynamical Casimir–Polder force in a semi-infinite rectangle waveguide

In this paper, we study the dynamical Casimir–Polder force between an ensemble of identical two-level atoms and the wall of a rectangle waveguide with semi-infinite length. With the presence of both the rotating wave and counter rotating wave terms in the light–matter interaction Hamiltonian, we utilize the perturbation theory to solve the Heisenberg equation. Up to the seconder of coupling strength, we obtain the energy shift analytically and the Casimir–Polder force numerically. Our result shows that the dynamical behavior of the Casimir force is closely connected to the photon propagation in the waveguide. Therefore, we hope this work will stimulate the studies about the quantum effect in waveguide scenario.

Dirac oscillator in dynamical noncommutative space

In this paper, we address the energy eigenvalues of two-dimensional Dirac oscillator perturbed by a dynamical noncommutative space. We derived the relativistic Hamiltonian of Dirac oscillator in the dynamical noncommutative space, in which the space-space Heisenberg-like commutation relations and noncommutative parameter are position-dependent. Then, we used this Hamiltonian to calculate the first-order correction to the eigenvalues and eigenvectors, based on the language of creation and annihilation operators and using the perturbation theory. It is shown that the energy shift depends on the dynamical noncommutative parameter τ . Knowing that, with a set of two-dimensional Bopp-shift transformation, we mapped the noncommutative problem to the standard commutative one.

Assessment of weak-coupling approximations on a driven two-level system under dissipation

The standard weak-coupling approximations associated to open quantum systems have been extensively used in the description of a two-level quantum system, qubit, subjected to relatively weak dissipation compared with the qubit frequency. However, recent progress in the experimental implementations of controlled quantum systems with increased levels of on-demand engineered dissipation has motivated precision studies in parameter regimes that question the validity of the approximations, especially in the presence of time-dependent drive fields. In this paper, we address the precision of weak-coupling approximations by studying a driven qubit through the numerically exact and non-perturbative method known as the stochastic Liouville-von Neumann equation with dissipation. By considering weak drive fields and a cold Ohmic environment with a high cutoff frequency, we use the Markovian Lindblad master equation as a point of comparison for the SLED method and study the influence of the bath-induced energy shift on the qubit dynamics. We also propose a metric that may be used in experiments to map the regime of validity of the Lindblad equation in predicting the steady state of the driven qubit. In addition, we study signatures of the well-known Mollow triplet and observe its meltdown owing to dissipation in an experimentally feasible parameter regime of circuit electrodynamics. Besides shedding light on the practical limitations of the Lindblad equation, we expect our results to inspire future experimental research on engineered open quantum systems, the accurate modeling of which may benefit from non-perturbative methods.

Optical and structural properties of the GaAs heterostructures grown using AlGaAs superlattice buffer layer on compliant Si(100) substrates with the preformed porous-Si (por-Si) layer.

360 nm and 700 nm thick GaAs layers were grown by MO MOCVD growth technique directly on compliant Si (100) substrate and on supper-lattice (SL) AlGaAs buffer layer. The XRD study revealed better structural quality for the sample grown on SL / por-Si buffer. AFM study revealed a smoother sample surface with blocks of more regular rectangular shape and larger size as well. Photoluminescence spectra of the samples revealed an energy shift of PL maximum intensity for both samples. Sample grown on SL buffer also showed higher PL intensity corresponding to better crystalline perfection.

Statistical approach to the process of tunnel ionisation of impurity centres near the heterointerface

To date, the processes of tunnel ionisation of impurities near the interface between two different semiconductors have been comprehensively studied. The most important parameters of the contact electron states of impurities have been determined. However, the calculated expressions for these parameters have been of local nature, as applied to individual impurities. Meanwhile, it is easy to understand that a number of processes, such as the flow of charge carriers and their diffusion through a heterojunction, are clearly statistical in nature. The same applies to the processes of tunnel ionisation of shallow and/or deep impurities near the interface. A statistical approach to the calculation of the parameters of tunnel ionisation of impurities broadens the opportunities for obtaining fundamental information regarding surface electronstates.The aim of this work was to use a statistical approach to study the effect of the heterointerface on the energy spectrum of shallow and deep centres. For this purpose, the expansion of the reflected quasi-classical wave function within the complete system of spherical harmonics and the subsequent extraction of the zero harmonic amplitude (s-component) was used to estimate the minimum distance from the impurity to the heterobarrier and to specify the limitations of the applicability of the results obtained in other works. The article analyses the conditions of the quasi-classical approximation which are used to estimate the order of the value for the minimum height of the potential barrier (pit).This work (with due consideration given to the minimum distance estimate) presents averaged formulas obtained for the energy shift of the ground state and the lifetime of the quasi-stationary state depending on the distance from the heterobarrier. Some qualitatively new considerations can also be found in the article. The distribution of impurity centres near the heterobarrier is assumed to be uniform. The article discusses the role of electron transitions in causing the buffer field effect for both shallow and deep centres. The focus of the article is on the estimates of various physical parameters characterising electron transitions near the heterobarrier.

Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions

Based on first-principles calculations, the bias-induced evolution of hybrid interface states in π-conjugated tricene and insulating octane magnetic molecular junctions is investigated. Obvious bias-induced splitting and energy shift of the spin-resolved hybrid interface states are observed in the two junctions. The recombination of the shifted hybrid interface states from different interfaces makes the spin polarization around the Fermi energy strongly bias dependent. The transport calculations demonstrate that in the π-conjugated tricene junction, the bias-dependent hybrid interface states work efficiently for large current, current spin polarization, and distinct tunneling magnetoresistance. But in the insulating octane junction, the spin-dependent transport via the hybrid interface states is inhibited, which is only slightly disturbed by the bias. This work reveals the phenomenon of bias-induced reconstruction of hybrid interface states in molecular spinterface devices, and the underlying role of molecular conjugated orbitals in the transport ability of hybrid interface states.

Quantum Confinement of Chiral Charge Carriers in Ring Conductors

<p>We theoretically study the quantum confinement effects and transport prop- erties of quantum ring (QR) systems. In particular, we investigate QRs made out of the following materials: single-layer graphene (SLG), single- layer transition-metal dichalcogenides (TMDs) and narrow-gap semiconduc- tor quantum wells (SQWs). Via perturbation theory and assuming that the ring aspect ratio is small, the general subband dispersion relations of these hard-wall ring confined systems are determined. These dispersion results agree with and extend on previous works. We discover the necessity of including both a size-quantisation energy and an angular momentum dependent energy shift to the dispersion equation due to their sizeable impact on the conductance of the system. The topological properties of these QR systems is also investigated. We find that QR confinement of materials may destroy the topologically non-trivial properties of states. The topological phase can be recovered when the band structure is inverted and the confined material parameters satisfy certain critical widths and gap limits. An analytical expression of the conductance for QRs (with symmetrically- arranged leads), in the presence of the perpendicular magnetic field piercing the centre of the ring, is derived. We study the geometric (i.e. Berry) and dynamic phases of the system that arise from the interference of partial waves in the ring branches. We discover that the Berry phase is modified by a correction term that arises purely from the quantum confinement of the materials. This has generally not been taken into account by previous studies. The explicit analytical expressions of the phase correction term are derived and shown to be proportional to the angular momentum dependent energy shift, present in the dispersion relations, for lead injection energies close to the subband energy. Overall, this study finds that the material-dependent phase plays a significant role in both the dispersion relation and the conductance of QRs and thus provides a useful insight for future experimental efforts with regards to transport in QR systems.</p>

Quantum Confinement of Chiral Charge Carriers in Ring Conductors

<p>We theoretically study the quantum confinement effects and transport prop- erties of quantum ring (QR) systems. In particular, we investigate QRs made out of the following materials: single-layer graphene (SLG), single- layer transition-metal dichalcogenides (TMDs) and narrow-gap semiconduc- tor quantum wells (SQWs). Via perturbation theory and assuming that the ring aspect ratio is small, the general subband dispersion relations of these hard-wall ring confined systems are determined. These dispersion results agree with and extend on previous works. We discover the necessity of including both a size-quantisation energy and an angular momentum dependent energy shift to the dispersion equation due to their sizeable impact on the conductance of the system. The topological properties of these QR systems is also investigated. We find that QR confinement of materials may destroy the topologically non-trivial properties of states. The topological phase can be recovered when the band structure is inverted and the confined material parameters satisfy certain critical widths and gap limits. An analytical expression of the conductance for QRs (with symmetrically- arranged leads), in the presence of the perpendicular magnetic field piercing the centre of the ring, is derived. We study the geometric (i.e. Berry) and dynamic phases of the system that arise from the interference of partial waves in the ring branches. We discover that the Berry phase is modified by a correction term that arises purely from the quantum confinement of the materials. This has generally not been taken into account by previous studies. The explicit analytical expressions of the phase correction term are derived and shown to be proportional to the angular momentum dependent energy shift, present in the dispersion relations, for lead injection energies close to the subband energy. Overall, this study finds that the material-dependent phase plays a significant role in both the dispersion relation and the conductance of QRs and thus provides a useful insight for future experimental efforts with regards to transport in QR systems.</p>