Analysis of the thermo-optic effect in lateral-carrier-injection SOI ridge waveguide devices

2010 ◽  
Vol 31 (6) ◽  
pp. 064009 ◽  
Author(s):  
Zhao Jiate ◽  
Zhao Yong ◽  
Wang Wanjun ◽  
Hao Yinlei ◽  
Zhou Qiang ◽  
...  
Keyword(s):  
Ridge Waveguide ◽  
Carrier Injection ◽  
Waveguide Devices

A Novel Spot-Size Converter with Asymmetric Taper for Deep-Ridge Waveguide Devices

2019 ◽  
Author(s):  
Takuo Hiratani ◽  
Naoya Kono ◽  
Tomokazu Katsuyama ◽  
Ryuji Yamabi ◽  
Yuhki Itoh ◽  
...  
Keyword(s):  
Spot Size ◽  
Ridge Waveguide ◽  
Waveguide Devices

Design of ridge waveguide couplers with carrier injection using discrete spectral index method

1992 ◽  
Vol 28 (9) ◽  
pp. 841 ◽  
Author(s):  
S.V. Burke ◽  
P.C. Kendall ◽  
P.N. Robson ◽  
G.J. Rees ◽  
M.J. Adams
Keyword(s):  
Spectral Index ◽  
Ridge Waveguide ◽  
Carrier Injection ◽  
Index Method

scholarly journals Design of Polarization-Independent Coarse Wavelength Splitters Based on Ridge-Waveguide Directional Couplers

2011 ◽  
Vol 2011 ◽  
pp. 1-9 ◽  
Author(s):  
Chee-Wei Lee
Keyword(s):  
Planar Waveguide ◽  
Filter Design ◽  
Optical Network ◽  
Ridge Waveguide ◽  
Passive Optical Network ◽  
Polarization Splitter ◽  
Directional Couplers ◽  
Waveguide Devices ◽  
Wavelength Filter ◽  
Polarization Independent

We present the first unique design of a polarization-independent dual-wavelength splitter for wavelengths around 1.3 μm and 1.55 μm that is potentially of great interest to passive optical network (PON) applications. The filter design is simple compared with the other architectures and is based on ridge-type lateral directional couplers that can be readily integrated with other planar waveguide devices. Two design examples, based on InP/InGaAsP and Si/SiGe waveguides, are given. This polarization-independent wavelength splitting is achieved by exploiting the polarization dependence of the waveguides to produce coupling lengths that are sensitive to polarization and wavelength. We show that, to split the wavelengths without splitting the polarizations, the coupling lengths must be sufficiently different for TE and TM and for the different wavelengths in order to give the correct required ratios between the TE and TM coupling lengths for the two wavelengths of interest. We also show that the same approach can be applied to the design of a polarization splitter. The crosstalk, optical bandwidth, and fabrication sensitivity for the wavelength filter are evaluated.

Investigation of spin-polarized carrier injection effect in|YBa2Cu3O7/SrTiO3/La0.67/Sr0.33MnO3 and YBa2Cu3O7/La0.67Sr0.33MnO3 heterostructures

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-53-Pr11-57
Author(s):  
B. Vengalis ◽  
V. Plausinaitiene ◽  
A. Abrutis ◽  
Z. Saltyte ◽  
R. Butkute ◽  
...  
Keyword(s):  
Carrier Injection ◽  
Spin Polarized ◽  
Injection Effect

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

Controlled Injection of Holes into ALQ3 Based Oleds by Means of An Oxidized Transport Layer

2001 ◽  
Vol 708 ◽  
Author(s):  
Mathew K. Mathai ◽  
Keith A. Higginson ◽  
Bing R. Hsieh ◽  
Fotios Papadimitrakopoulos
Keyword(s):  
Indium Tin Oxide ◽  
Oxidative Degradation ◽  
Transport Layer ◽  
Hole Injection ◽  
Carrier Injection ◽  
Salt Loading ◽  
Light Emitting ◽  
Hole Transporting ◽  
Intrinsic Degradation ◽  
Variable Conductivity

ABSTRACTIn this paper we report a method for tuning the extent of hole injection into the active light emitting tris- (8-hydroxyquinoline) aluminum (Alq3) layer in organic light emitting diodes (OLEDs). This is made possible by modifying the indium tin oxide (ITO) anode with an oxidized transport layer (OTL) comprising a hole transporting polycarbonate of N,N'-bis(3-hydroxymethyl)-N,N'-bis(phenyl) benzidine and diethylene glycol (PC-TPB-DEG) doped with varying concentrations of antimonium hexafluoride salt of N,N,N',N'-tetra-p-tolyl-4,4'-biphenyldiamine (TMTPD+ SbF6-). The conductivity of the OTL can be changed over three orders of magnitude depending on salt loading. The analysis of hole and electron current variations in these devices indicates that optimizing the conductivity of the OTL enables the modulation of hole injection into the Alq3 layer. The bipolar charge transport properties for OLEDs in which the interfacial carrier injection barriers have been minimized, are governed by the conductivities of the respective layers and in this case it is shown that the variable conductivity of the OTL does allow for better control of the same. Accordingly, varying the concentration of holes in the device indicates that beyond an optimum concentration of holes, further hole injection results in the formation of light quenching cationic species and the initiation of oxidative degradation processes in the Alq3 layer, thus accelerating the intrinsic degradation of these devices. The variable conductivity of the OTL can hence be used to minimize the occurrence of these processes.

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