scholarly journals Trapping Large Magnetic Field by Suppression of Thermomagnetic Instability in Coated Conductor Stacks

2018 ◽  
Vol 1054 ◽  
pp. 012050 ◽  
Author(s):  
T Hashimoto ◽  
S Pyon ◽  
T Tamegai
1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.


2021 ◽  
Vol 118 (14) ◽  
pp. 142404
Author(s):  
Tomoya Kanematsu ◽  
Yoshihiko Okamoto ◽  
Koshi Takenaka

2012 ◽  
Vol 22 (3) ◽  
pp. 6600404-6600404 ◽  
Author(s):  
Hyung-Seop Shin ◽  
M. J. Dedicatoria ◽  
S. Awaji ◽  
K. Watanabe

1973 ◽  
Vol 51 (4) ◽  
pp. 491-492 ◽  
Author(s):  
A. N. Chakravarti ◽  
D. P. Parui

The diffusivity–mobility ratio in degenerate semiconductors in the presence of a large magnetic field is found to increase with increasing temperature at a rate which is dependent on temperature at relatively low temperatures. It is also found that, at any given temperature, the ratio is increased by the application of the field.


2017 ◽  
Vol 27 (4) ◽  
pp. 1-5 ◽  
Author(s):  
Makoto Tsuda ◽  
Reo Takano ◽  
Hideaki Miura ◽  
Daisuke Miyagi ◽  
Tetsuya Matsuda ◽  
...  

2000 ◽  
Vol 178 (1) ◽  
pp. 33-38 ◽  
Author(s):  
F. Pulizzi ◽  
P.C.M. Christianen ◽  
J.C. Maan ◽  
T. Wojtowicz ◽  
G. Karczewski ◽  
...  

1990 ◽  
Vol 181 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S. N. Biswas

ABSTRACTWe shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW’s), quantum dots (QDs) and compare the same with the hulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1-xC dxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.


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