Large magnetic-field-induced strain at the magnetic order transition in triangular antiferromagnet AgCrS2

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

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On the thermoelectric power of the electrons in degeneraten‐AII3BV2compounds in the presence of a classically large magnetic field

Journal of Applied Physics ◽

10.1063/1.342617 ◽

1989 ◽

Vol 65 (9) ◽

pp. 3480-3483 ◽

Cited By ~ 16

Author(s):

K. P. Ghatak ◽

M. Mondal

Keyword(s):

Magnetic Field ◽

Thermoelectric Power ◽

Large Magnetic Field

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Temperature Dependence of the Diffusivity–Mobility Ratio in Degenerate Semiconductors in the Presence of a Large Magnetic Field

Canadian Journal of Physics ◽

10.1139/p73-062 ◽

1973 ◽

Vol 51 (4) ◽

pp. 491-492 ◽

Cited By ~ 13

Author(s):

A. N. Chakravarti ◽

D. P. Parui

Keyword(s):

Magnetic Field ◽

Temperature Dependence ◽

Low Temperatures ◽

Mobility Ratio ◽

Degenerate Semiconductors ◽

Large Magnetic Field ◽

Increasing Temperature

The diffusivity–mobility ratio in degenerate semiconductors in the presence of a large magnetic field is found to increase with increasing temperature at a rate which is dependent on temperature at relatively low temperatures. It is also found that, at any given temperature, the ratio is increased by the application of the field.

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Two-Dimensional Excitons in Large Magnetic Field Gradients

phys stat sol (a) ◽

10.1002/1521-396x(200003)178:1<33::aid-pssa33>3.0.co;2-i ◽

2000 ◽

Vol 178 (1) ◽

pp. 33-38 ◽

Cited By ~ 8

Author(s):

F. Pulizzi ◽

P.C.M. Christianen ◽

J.C. Maan ◽

T. Wojtowicz ◽

G. Karczewski ◽

...

Keyword(s):

Magnetic Field ◽

Two Dimensional ◽

Large Magnetic Field ◽

Field Gradients ◽

Magnetic Field Gradients

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Thermoelectric Power in Quantum Confined Optoelectronic Materials under Classically Large Magnetic Field

MRS Proceedings ◽

10.1557/proc-181-325 ◽

1990 ◽

Vol 181 ◽

Author(s):

Kamakhya P. Ghatak ◽

B. De ◽

M. Mondal ◽

S. N. Biswas

Keyword(s):

Magnetic Field ◽

Quantum Dots ◽

Quantum Wells ◽

Thermoelectric Power ◽

Optoelectronic Materials ◽

Large Magnetic Field ◽

Dispersion Law ◽

Quantum Well Wires ◽

Electron Dispersion ◽

Theoretical Results

ABSTRACTWe shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW’s), quantum dots (QDs) and compare the same with the hulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1-xC dxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

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On the Thermoelectric Power in Quantum Dots of Non-Parabolic Semiconductors in Thr Presence of a Classically Large Field

MRS Proceedings ◽

10.1557/proc-198-327 ◽

1990 ◽

Vol 198 ◽

Cited By ~ 5

Author(s):

Ktamkahya P. Ghatak ◽

B. De ◽

M. Mondal ◽

S.N. Biswas

Keyword(s):

Magnetic Field ◽

Quantum Dots ◽

Film Thickness ◽

Thermoelectric Power ◽

Experimental Observation ◽

Electron Concentration ◽

Large Field ◽

Large Magnetic Field ◽

Theoretical Results

ABSTRACTWe have studied the thermoelectric power in quantum dots (QDs) of non-parabolic semiconductors in the presence of a classically large magnetic field and we have taken A3N B2V, ternary chalcopyrite, II-VI and III-V semiconductors. It is found that the thermopower increases with increasing film thickness and decreasing electron concentration respectively in all the cases. The numerical values are greatest for Cd3As2 and least for InAs and the theoretical results are in ageement with the experimental observation as reported elsewhere.

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