scholarly journals Effects of Back-Reflectors on a-Si: H Solar Cells

2021 ◽  
Vol 1965 (1) ◽  
pp. 012108
Author(s):  
Zhihua Hu ◽  
Abuduwayiti Aierken ◽  
Hongwei Diao
Keyword(s):  
2020 ◽  
Vol 12 (23) ◽  
pp. 26184-26192 ◽  
Author(s):  
Shuangying Cao ◽  
Dongliang Yu ◽  
Yinyue Lin ◽  
Chi Zhang ◽  
Linfeng Lu ◽  
...  

2007 ◽  
Vol 989 ◽  
Author(s):  
Jason Collins ◽  
Nikolas J. Podraza ◽  
Jian Li ◽  
Xinmin Cao ◽  
Xunming Deng ◽  
...  

AbstractPhase diagrams have been established to describe very high frequency (vhf) plasma-enhanced chemical vapor deposition (PECVD) processes for intrinsic hydrogenated silicon (Si:H) and silicon-germanium alloy (Si1-xGex:H) thin films using crystalline Si substrates that have been over-deposited with n-type amorphous Si:H (a-Si:H). The Si:H and Si1-xGex:H processes are applied for the top and middle i-layers of triple-junction a-Si:H-based n-i-p solar cells fabricated at University of Toledo. Identical n/i cell structures were co-deposited on textured Ag/ZnO back-reflectors in order to correlate the phase diagram and the performance of single-junction solar cells, the latter completed through over-deposition of the p-layer and top contact. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si1-xGex:H solar cells are obtained when the i-layers are prepared under maximal H2 dilution conditions.


2009 ◽  
Vol 1153 ◽  
Author(s):  
Jeffrey Yang ◽  
Baojie Yan ◽  
Guozhen Yue ◽  
Subhendu Guha

AbstractLight trapping effect in hydrogenated amorphous silicon-germanium alloy (a-SiGe:H) and nano-crystalline silicon (nc-Si:H) thin film solar cells deposited on stainless steel substrates with various back reflectors is reviewed. Structural and optical properties of the Ag/ZnO back reflectors are systematically characterized and correlated to solar cell performance, especially the enhancement in photocurrent. The light trapping method used in our current production lines employing an a-Si:H/a-SiGe:H/a-SiGe:H triple-junction structure consists of a bi-layer of Al/ZnO back reflector with relatively thin Al and ZnO layers. Such Al/ZnO back reflectors enhance the short-circuit current density, Jsc, by ˜20% compared to bare stainless steel. In the laboratory, we use Ag/ZnO back reflector for higher Jsc and efficiency. The gain in Jsc is about ˜30% for an a-SiGe:H single-junction cell used in the bottom cell of a multi-junction structure. In recent years, we have also worked on the optimization of Ag/ZnO back reflectors for nano-crystalline silicon (nc-Si:H) solar cells. We have carried out a systematic study on the effect of texture for Ag and ZnO. We found that for a thin ZnO layer, a textured Ag layer is necessary to increase Jsc, even though the parasitic loss is higher at the Ag and ZnO interface due to the textured Ag. However, a flat Ag can be used for a thick ZnO to reduce the parasitic loss, while the light scattering is provided by the textured ZnO. The gain in Jsc for nc-Si:H solar cells on Ag/ZnO back reflectors is in the range of ˜60-75% compared to cells deposited on bare stainless steel, which is much larger than the enhancement observed for a-SiGe:H cells. The highest total current density achieved in an a-Si:H/a-SiGe:H/nc-Si:H triple-junction structure on Ag/ZnO back reflector is 28.6 mA/cm2, while it is 26.9 mA/cm2 for a high efficiency a-Si:H/a-SiGe:H/a-SiGe:H triple-junction cell.


Author(s):  
Concetto Eugenio Andrea Cordaro ◽  
Nico Tucher ◽  
Stefan Tabernig ◽  
Hubert Hauser ◽  
Oliver Höhn ◽  
...  

2009 ◽  
Vol 1153 ◽  
Author(s):  
Benjamin Curtin ◽  
Rana Biswas ◽  
Vikram Dalal

AbstractPhotonic crystal based back-reflectors are an attractive solution for light management and enhancing optical absorption in thin film solar cells, without undesirable losses. We have fabricated prototype photonic crystal back-reflectors using photolithographic methods and reactive-ion etching. The photonic crystal back-reflector has a triangular lattice symmetry, a thickness of 250 nm, and a pitch of 765 nm. Scanning electron microscopy images demonstrate high quality long range periodicity. An a-Si:H solar cell device was grown on this back-reflector using standard PECVD techniques. Measurements demonstrate strong diffraction of light and high diffuse reflectance by the photonic crystal back-reflector. The photonic crystal back-reflector increases the average photon collection by ˜9% in terms of normalized external quantum efficiency, relative to a reference device on a stainless steel substrate with an Ag coated back surface.


2013 ◽  
Vol 178 (9) ◽  
pp. 645-650 ◽  
Author(s):  
E. Moulin ◽  
U.W. Paetzold ◽  
K. Bittkau ◽  
M. Ermes ◽  
L. Ding ◽  
...  

2013 ◽  
Vol 114 (6) ◽  
pp. 063103 ◽  
Author(s):  
A. Micco ◽  
A. Ricciardi ◽  
M. Pisco ◽  
V. La Ferrara ◽  
L. V. Mercaldo ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document