scholarly journals Rapid determination of estradiol in milchigs based on Molecular Imprinting Technology by using estradiol selective silicon magnetic composite

2021 ◽  
Vol 2021 (1) ◽  
pp. 012007
Author(s):  
Yanjun Xu
2017 ◽  
Vol 37 (5) ◽  
pp. 1401-1409 ◽  
Author(s):  
Shoumin Wang ◽  
Peng Zhao ◽  
Ningyang Li ◽  
Xuguang Qiao ◽  
Zhixiang Xu

Luminescence ◽  
2011 ◽  
Vol 27 (4) ◽  
pp. 297-301 ◽  
Author(s):  
Zhenbo Liu ◽  
Fengyan Jia ◽  
Wenwen Wang ◽  
Cuixia Wang ◽  
Yongming Liu

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Navid Assi ◽  
Lukas Nejdl ◽  
Kristyna Zemankova ◽  
Kristyna Pavelicova ◽  
Jaroslava Bezdekova ◽  
...  

AbstractIn this work, we explored a new approach to a simple and sensitive fluorescence detection of thiols. The approach takes advantage of an in-situ formation of UV light-induced fluorescent nanoparticles (ZnCd/S quantum dots), while utilizing the thiol group of the analyte as a capping agent. The selectivity is ensured by the selective isolation of the thiol analyte by a polydopamine molecularly imprinted polymeric (MIP) layer. Based on this approach, a method for determination of thiols was designed. Key experimental parameters were optimized, including those of molecular imprinting and of effective model thiol molecule (l-cysteine) isolation. The relationship between the fluorescence intensity of ZnCd/S quantum dots and the concentration of l-cysteine in the range of 12–150 µg/mL was linear with a detection limit of 3.6 µg/mL. The molecularly imprinted polymer showed high absorption mass capacity (1.73 mg/g) and an excellent selectivity factor for l-cysteine compared to N-acetyl-l-cysteine and l-homocysteine of 63.56 and 87.48, respectively. The proposed method was applied for l-cysteine determination in human urine with satisfactory results. Due to a high variability of molecular imprinting technology and versatility of in-situ probe formation, methods based on this approach can be easily adopted for analysis of any thiol of interest.


Author(s):  
T. Y. Tan ◽  
W. K. Tice

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.


2017 ◽  
Vol 45 (2) ◽  
pp. 455-464
Author(s):  
T.T. Xue ◽  
J. Liu ◽  
Y.B. Shen ◽  
G.Q. Liu

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