Study of GaP/Si electron-selective contact deposited by plasma
2021 ◽
Vol 2086
(1)
◽
pp. 012091
Keyword(s):
Abstract The article is based on an important characterization task to accurately evaluate the properties of the layers, their interfaces with c-Si, and to select the best candidates to integrate them into a c-Si-based solar cell. The work has shown that GaP could be doped with n-type doping, thus providing a selective contact for the electrons, and has a significant valence band offset with c-Si, making it an excellent candidate as a selective contact, without requiring an additional ITO layer.