scholarly journals Study of GaP/Si electron-selective contact deposited by plasma

2021 ◽  
Vol 2086 (1) ◽  
pp. 012091
Author(s):  
A A Maksimova ◽  
A I Baranov ◽  
A V Uvarov ◽  
A S Gudovskikh ◽  
D A Kudryashov ◽  
...  

Abstract The article is based on an important characterization task to accurately evaluate the properties of the layers, their interfaces with c-Si, and to select the best candidates to integrate them into a c-Si-based solar cell. The work has shown that GaP could be doped with n-type doping, thus providing a selective contact for the electrons, and has a significant valence band offset with c-Si, making it an excellent candidate as a selective contact, without requiring an additional ITO layer.

Solar Energy ◽  
2022 ◽  
Vol 231 ◽  
pp. 684-693
Author(s):  
Yu Kawano ◽  
Jakapan Chantana ◽  
Takayuki Negami ◽  
Takahito Nishimura ◽  
Abdurashid Mavlonov ◽  
...  

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  

2007 ◽  
Vol 90 (13) ◽  
pp. 132105 ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
P. H. Jefferson ◽  
C. F. McConville ◽  
T. Wang ◽  
...  

2019 ◽  
Vol 90 ◽  
pp. 59-64 ◽  
Author(s):  
Nian Cheng ◽  
Weiwei Li ◽  
Shujie Sun ◽  
Zhiqiang Zhao ◽  
Zhenyu Xiao ◽  
...  

2010 ◽  
Vol 150 (41-42) ◽  
pp. 1991-1994 ◽  
Author(s):  
H.P. Song ◽  
G.L. Zheng ◽  
A.L. Yang ◽  
Y. Guo ◽  
H.Y. Wei ◽  
...  

2019 ◽  
Vol 114 (1) ◽  
pp. 011603 ◽  
Author(s):  
Guo-Dong Hao ◽  
Sachiko Tsuzuki ◽  
Shin-ichiro Inoue

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