Aluminum diffusion during laser-stimulated crystallization of thin silicon films
2021 ◽
Vol 2103
(1)
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pp. 012123
Keyword(s):
Abstract Diffusion of aluminum in amorphous silicon films during crystallization through infrared laser irradiation was studied. Diffusion regime was found to change from limited source to abundant source diffusion at higher laser source power. At the same time, crystalline structure of the obtained samples becomes more perfect, which is more characteristic to limited source diffusion mode.
2011 ◽
Vol 158
(1)
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pp. H25
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1986 ◽
Vol 4
(3)
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pp. 670-672
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Keyword(s):
1992 ◽
Vol 88
(18)
◽
pp. 2705
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