scholarly journals Multiphoton intersubband transitions in an armchair graphene nanoribbon

2021 ◽  
Vol 2103 (1) ◽  
pp. 012130
Author(s):  
B S Monozon ◽  
T A Fedorova ◽  
P Schmelcher

Abstract We present an analytical approach to the problem of the interband transitions in an armchair graphene nanoribbon (AGNR), exposed to the time-periodic electric field of strong light wave, polarized parallel to the ribbon axis. The two-dimensional Dirac equation for the massless electron subject to the ribbon confinement is employed. In the resonant approximation the probability of the transitions between the valence and conduction size-quantized subbands are calculated in an explicit form. We trace the dependencies of the Rabi frequency for these transitions on the ribbon width and electric field strength for both the multiphoton-assisted and tunneling regimes relevant to the fast oscillating and practically constant electric field, respectively. Estimates of the expected experimental values for the typically employed AGNR and laser technique facilities show that the Rabi oscillations can be observed under laboratory conditions. The data, corresponding to the intersubband tunneling, makes the AGNR a 1D condensed matter analog, in which the quantum electrodynamic vacuum decay can be detected by the employment of the attainable electric fields.

2015 ◽  
Vol 1112 ◽  
pp. 80-84
Author(s):  
Fatimah A. Noor ◽  
Rifky Syariati ◽  
Endi Suhendi ◽  
Mikrajuddin Abdullah ◽  
Khairurrijal

We have developed a model of the tunneling current in n-p-n bipolar transistor based on armchair graphene nanoribbon (AGNR). Airy-wavefunction approach is employed to obtain electron transmittance, and the obtained transmittance is then used to obtain the tunneling current. The tunneling current is calculated for various variables such as base-emitter voltage, base-current voltage, and AGNR width. It is found that the tunneling current increases with increasing the base-emitter voltage or the base-collector voltage. This result is due to the lowered barrier height of the base region caused by the increase in the base-emitter voltage or the base-collector voltage. In addition, the tunneling current density increases with the width for narrow AGNR and, on the other hand, it decreases for wide AGNR. This finding might be due to the contributions of the band gap energy and the electron effective mass of AGNR which are inversely proportional to the AGNR width.


2014 ◽  
Vol 4 (4) ◽  
pp. 259-262
Author(s):  
Rifky Syariati ◽  
◽  
Endi Suhendi ◽  
Fatimah A. Noor ◽  
Mikrajuddin Abdullah ◽  
...  

2021 ◽  
Author(s):  
Madhusudan Mishra ◽  
N R Das ◽  
Narayan Sahoo ◽  
Trinath Sahu

Abstract We study the electron transport in armchair graphene nanoribbon (AGNR) resonant tunneling diode (RTD) using square and V-shaped potential well profiles. We use non-equilibrium Green’s function formalism to analyze the transmission and I-V characteristics. Results show that an enhancement in the peak current (Ip ) can be obtained by reducing the well width (Ww ) or barrier width (Wb ). As Ww decreases, Ip shifts to a higher peak voltage (Vp ), while there is almost no change in Vp with decreasing Wb . It is gratifying to note that there is an enhancement in Ip by about 1.6 times for a V-shaped well over a square well. Furthermore, in the case of a V-shaped well, the negative differential resistance occurs in a shorter voltage range, which may beneficial for ultra-fast switching and high-frequency signal generation. Our work anticipates the suitability of graphene, having better design flexibility, to develop ideally 2D RTDs for use in ultra-dense nano-electronic circuits and systems.


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