Electron Tunneling Current in an n-p-n Bipolar Transistor Based on Armchair Graphene Nanoribbon by Using Airy-Wavefunction Approach

2015 ◽  
Vol 1112 ◽  
pp. 80-84
Author(s):  
Fatimah A. Noor ◽  
Rifky Syariati ◽  
Endi Suhendi ◽  
Mikrajuddin Abdullah ◽  
Khairurrijal
Keyword(s):  
Electron Tunneling ◽  
Tunneling Current ◽  
Band Gap Energy ◽  
Graphene Nanoribbon ◽  
Bipolar Transistor ◽  
Electron Effective Mass ◽  
Collector Voltage ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene ◽  
Emitter Voltage

We have developed a model of the tunneling current in n-p-n bipolar transistor based on armchair graphene nanoribbon (AGNR). Airy-wavefunction approach is employed to obtain electron transmittance, and the obtained transmittance is then used to obtain the tunneling current. The tunneling current is calculated for various variables such as base-emitter voltage, base-current voltage, and AGNR width. It is found that the tunneling current increases with increasing the base-emitter voltage or the base-collector voltage. This result is due to the lowered barrier height of the base region caused by the increase in the base-emitter voltage or the base-collector voltage. In addition, the tunneling current density increases with the width for narrow AGNR and, on the other hand, it decreases for wide AGNR. This finding might be due to the contributions of the band gap energy and the electron effective mass of AGNR which are inversely proportional to the AGNR width.

scholarly journals Modeling of Electron Tunneling Current in a p-n Junction Based on Strained Armchair Graphene Nanoribbon

2014 ◽  
Vol 4 (4) ◽  
pp. 259-262
Author(s):  
Rifky Syariati ◽  
◽  
Endi Suhendi ◽  
Fatimah A. Noor ◽  
Mikrajuddin Abdullah ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Tunneling Current ◽  
Graphene Nanoribbon ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

A Theoretical Model of Band-to-Band Tunneling Current in an Armchair Graphene Nanoribbon Tunnel Field-Effect Transistor

2014 ◽  
Vol 896 ◽  
pp. 371-374 ◽  
Author(s):  
Christoforus S. Putrro Bimo ◽  
Fatimah A. Noor ◽  
Mikrajuddin Abdullah ◽  
Khairurrijal
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Tunneling Current ◽  
Graphene Nanoribbon ◽  
Electron Effective Mass ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene ◽  
Parabolic Dispersion

Tunneling current in an armchair graphene nanoribbon (AGNR) tunnel field-effect transistor (TFET) was modeled. A linear equation was employed in describing a potential distribution within the AGNR due to its simplicity. A parabolic dispersion and an electron effective mass obtained by approximating kx 0 to the parabolic dispersion were applied to AGNR. In order to obtain electron transmittance, electron wavefunctions in AGNR were based on Airy functions. The obtained transmittance was then applied to calculate the tunneling current by employing the Landauer formula. The calculated results showed that the tunneling current increases with the AGNR width. It was also shown that the tunneling current increases as temperature decreases. In addition, the gate voltage influences the saturation condition of tunneling current in AGNR TFETs.

Simulation of Dirac Electron Tunneling Current in Armchair Graphene Nanoribbon Tunnel Field-Effect Transistors Using a Transfer Matrix Method

2015 ◽  
Vol 1112 ◽  
pp. 128-132
Author(s):  
Endi Suhendi ◽  
Rifky Syariati ◽  
Fatimah A. Noor ◽  
Neny Kurniasih ◽  
Khairurrijal
Keyword(s):  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Field Effect ◽  
Electron Tunneling ◽  
Field Effect Transistors ◽  
Tunneling Current ◽  
Dirac Electron ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

We simulate quantum mechanical tunneling current in armchair graphene nanoribbon tunnel field-effect transistors (AGNR-TFETs). The relativistic Dirac equation is used to determine electron wave functions in the AGNRs, while the potential profile is solved by the Poisson equation. We use a transfer matrix method (TMM) to calculate the electron transmittance and the Dirac electron tunneling current in the AGNR-TFETs. The results show that the Dirac electron tunneling current increases with increasing the drain and gate voltages. Moreover, the AGNR width and the thickness of insulator affect the characteristics of the Dirac electron tunneling currents.

Simulation of Dirac Tunneling Current of an Armchair Graphene Nanoribbon-Based P-N Junction Using a Transfer Matrix Method

2014 ◽  
Vol 974 ◽  
pp. 205-209 ◽  
Author(s):  
Endi Suhendi ◽  
Rifky Syariati ◽  
Fatimah A. Noor ◽  
Neny Kurniasih ◽  
Khairurrijal
Keyword(s):  
Dirac Equation ◽  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Incidence Angle ◽  
Tunneling Current ◽  
Numerical Approach ◽  
Graphene Nanoribbon ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

We have studied tunneling current in a p-n junction based on armchair graphene nanoribbon (AGNR) by using the relativistic Dirac equation and a transfer matrix method (TMM). The electron wave function was derived by solving the relativistic Dirac equation. The TMM, which is a numerical approach, was used to calculate electron transmittance and the tunneling current. The results showed that the tunneling current increases with the bias voltage. On the other hand, the tunneling current increases with the decreases in the electron incidence angle and temperature. Moreover, the increases in the AGNR width and electric field in the p-n junction result in the increase in the tunneling current.

Sign in / Sign up

Export Citation Format

Share Document