scholarly journals Reference UVC LED Source

2022 ◽  
Vol 2149 (1) ◽  
pp. 012017
Author(s):  
Siarhey Nikanenka ◽  
Aliaksandr Danilchyk ◽  
Barbara Shulenkova ◽  
Olga Tarasova ◽  
Evgenii Lutsenko
Keyword(s):  
Active Region ◽  
Power Density ◽  
Emission Band ◽  
Degradation Rate ◽  
Laser Diodes ◽  
Optical Characteristics ◽  
Uv Led ◽  
Spectrum Region ◽  
Injection Currents ◽  
Uv C

Abstract A compact reference UVC source based on commercially available LED has been developed. The article presents the design and results of the study of the optical characteristics of the radiation of the reference UVC LED source. The source provides a power density of radiation up to 400 μW/cm2 on area of 3×3 mm with inhomogeneity of 1.5 %.The emission band of a source with a maximum of 265 nm is predominantly 97 % in the UV-C spectrum region, and a small part of it is inUV-B and UV-A regions, 2.7 % and 0.3 %, respectively. The use of ComboSource for laser diodes allowed to precisionally stabilize the injection current and temperature of the LED. It is shown that overheating of the active region of the selected UV LED is only 10°C - 25°C at the recommended injection currents due to the peculiarities of its design. This results in a low degradation rate of the UV LED. Possible ways to improve the characteristics of the reference UVCsource are discussed.

Al-free active region laser diodes at 894 nm for compact Cesium atomic clocks

2015 ◽  
Author(s):  
N. Von Bandel ◽  
J. Bébé Manga Lobé ◽  
M. Garcia ◽  
A. Larrue ◽  
Y. Robert ◽  
...  
Keyword(s):  
Active Region ◽  
Laser Diodes ◽  
Atomic Clocks

Engineering the Active Region to Enhance the IQE by ~8% in AlGaN/GaN based UV-C LED

2021 ◽  
Author(s):  
Jayant Acharya ◽  
Sugandham Venkateshh ◽  
Kankat Ghosh
Keyword(s):  
Active Region ◽  
Uv C

Review of Al-free active region laser diodes on GaAs for pumping applications

2015 ◽  
Author(s):  
M. Krakowski ◽  
M. Lecomte ◽  
N. Michel ◽  
M. Calligaro ◽  
M. Carbonnelle ◽  
...  
Keyword(s):  
Active Region ◽  
Laser Diodes

Asymmetric Heterostructure With Reduced Distance From Active Region to Heatsink for 810-nm Range High-Power Laser Diodes

2012 ◽  
Vol 48 (4) ◽  
pp. 465-471 ◽  
Author(s):  
Andrzej Malag ◽  
Elżbieta Dabrowska ◽  
Marian Teodorczyk ◽  
Grzegorz Sobczak ◽  
Anna Kozlowska ◽  
...  
Keyword(s):  
Active Region ◽  
High Power ◽  
Laser Diodes ◽  
High Power Laser ◽  
Power Laser ◽  
Nm Range

Beam shaping method to improve power density of semiconductor laser diodes

2019 ◽  
Vol 48 (8) ◽  
pp. 805010
Author(s):  
辛光泽 Xin Guangze ◽  
陈东启 Chen Dongqi ◽  
蔡 毅 Cai Yi ◽  
白廷柱 Bai Tingzhu ◽  
王岭雪 Wang Lingxue
Keyword(s):  
Semiconductor Laser ◽  
Power Density ◽  
Laser Diodes ◽  
Beam Shaping ◽  
Semiconductor Laser Diodes

scholarly journals Temperature performance of InGaAs/InGaAlAsTemperature performance of InGaAs/InGaAlAs laser diodes with δ-doping active region

2019 ◽  
Vol 1410 ◽  
pp. 012104
Author(s):  
S S Rochas ◽  
I I Novikov ◽  
A G Gladyshev ◽  
E S Kolodeznyi ◽  
M V Maximov ◽  
...  
Keyword(s):  
Active Region ◽  
Laser Diodes ◽  
Temperature Performance

High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range

1996 ◽  
Vol 450 ◽  
Author(s):  
M. Razeghi ◽  
J. Diaz ◽  
H. J. Yi ◽  
D. Wu ◽  
B. Lane ◽  
...  
Keyword(s):  
Active Region ◽  
Energy Gap ◽  
Maximum Output Power ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Maximum Output ◽  
Double Heterostructure

ABSTRACTWe report metalorganic chemical vapor deposition-grown double heterostructure and multiple quantum well InAsSb/InAsSbP laser diodes emitting at 3 to 4 μm and light emitting diodes up to 5 μm. Maximum output power up to 1 W (from two facets) with differential efficiency above 70 % up to 150 K was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.6 μm at 90 K. Maximum operating temperature up to 220 K with threshold current density of 40 A/cm2 at 78 K were achieved from the double-heterostructure lasers emitting at 3.2 μm. The far-field beam divergence as narrow as 24° was achieved with the use of higher energy gap barrier layers, i.e., lower effective refractive index, in MQW active region. We also discuss the effect of composition-fluctuation in the InAsSb active region on the gain and threshold current of the lasers.

Effects of active region design on gain and carrier injection and transport of CW $(20\bar{2}\bar{1})$ semipolar InGaN laser diodes

2016 ◽  
Vol 9 (9) ◽  
pp. 092104 ◽  
Author(s):  
Daniel L. Becerra ◽  
Daniel A. Cohen ◽  
Robert M. Farrell ◽  
Steven P. DenBaars ◽  
Shuji Nakamura
Keyword(s):  
Active Region ◽  
Laser Diodes ◽  
Carrier Injection
Sign in / Sign up

Export Citation Format

Share Document