scholarly journals Effect of surface etching and electrodeposition of copper on nitinol

2017 ◽  
Vol 258 ◽  
pp. 012009
Author(s):  
E Ramos-Moore ◽  
A Rosenkranz ◽  
L F Matamala ◽  
A Videla ◽  
A Durán ◽  
...  
Keyword(s):  
Surface Etching ◽  
Effect Of Surface

Effect of surface etching on the magnetic properties and grain-boundary Dy-diffusion in DyH2-dip-coated sintered Nd-Fe-B magnets

2015 ◽  
Vol 21 (3) ◽  
pp. 600-606 ◽  
Author(s):  
Ju-Young Kong ◽  
Tae-Hoon Kim ◽  
Seong-Rae Lee ◽  
Hyo-Jun Kim ◽  
Min-Woo Lee ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Grain Boundary ◽  
Surface Etching ◽  
Effect Of Surface

Effect of surface etching on the tensile behavior of coarse- and ultrafine-grained pure titanium

2017 ◽  
Vol 707 ◽  
pp. 337-343 ◽  
Author(s):  
Seung Mi Baek ◽  
Alexander V. Polyakov ◽  
Ji Hyun Moon ◽  
Irina P. Semenova ◽  
Ruslan Z. Valiev ◽  
...  
Keyword(s):  
Pure Titanium ◽  
Tensile Behavior ◽  
Surface Etching ◽  
Ultrafine Grained ◽  
Effect Of Surface

Effect of Surface Etching on the Efficiency of ZnO-Based Dye-Sensitized Solar Cells

Langmuir ◽  
2010 ◽  
Vol 26 (10) ◽  
pp. 7153-7156 ◽  
Author(s):  
Fengpo Yan ◽  
Lihua Huang ◽  
Jinsheng Zheng ◽  
Jin Huang ◽  
Zhang Lin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Dye Sensitized Solar Cells ◽  
Dye Sensitized ◽  
Surface Etching ◽  
Sensitized Solar Cells ◽  
Effect Of Surface

Effect of surface etching on condensing heat transfer

2016 ◽  
Vol 30 (2) ◽  
pp. 871-877 ◽  
Author(s):  
Sung Chul Seok ◽  
Jae Won Park ◽  
Jiyeon Jung ◽  
Chonggun Choi ◽  
Gyu Hong Choi ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Surface Etching ◽  
Condensing Heat Transfer ◽  
Effect Of Surface

Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy

2019 ◽  
Vol 963 ◽  
pp. 119-122
Author(s):  
Tawhid Rana ◽  
Gil Yong Chung ◽  
Steve Anderson ◽  
Ian Manning ◽  
Willie Bowen ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Gas Mixtures ◽  
Stacking Fault ◽  
High Density ◽  
Experimental Results ◽  
The Other ◽  
Surface Etching ◽  
Other Hand ◽  
Effect Of Surface

Epilayers grown on substrates etched by various etching conditions were studied for stacking fault defects. Substrates were etched by H2, H2+ HCl and H2 + CxHy gases prior to epilayer growth for comparison. High density of SF was observed in the epilayers when H2+HCl or H2+CxHy gas mixtures were used. On the other hand, much lower density of stacking faults (SF) (<1 cm-2) was observed in the epilayer grown on the surface etched by only H2 gas. However, a high number of pits were generated in the epilayer grown on substrate etched by H2 only, which can be considered to be tradeoff of achieving low SF in epilayer by substrate etching. We also conclude from our experimental results that C rich surface is more favorable to generate SF in epilayer compared to Si rich surface.

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