A comparative study of different emitter diffusion profiles on the performance of Si solar cells

2022 ◽  
Author(s):  
Mukesh Pratap Singh ◽  
Mohd Amir
Keyword(s):  
Solar Cells ◽  
Comparative Study ◽  
Peak Concentration ◽  
Maximum Efficiency ◽  
Back Surface ◽  
Recombination Rates ◽  
Relative Diffusion ◽  
Si Solar Cells ◽  
Different Types ◽  
Diffusion Profiles

Abstract We have investigated the effect of emitter design key parameters such as depth factor and the peak concentration for different types of emitter diffusion profiles (uniform, exponential, Gaussian, and Erfc) on the performance of silicon (Si) solar cells. The value of the depth factor is optimized as 0.1 µm for all these emitter diffusion profiles. Afterward, the peak concentration value is optimized for all the diffusion profiles. A close examination of relative diffusion lengths, conductivities, recombination rates, internal and external quantum efficiencies for these diffusion profiles revealed that among all the considered emitter diffusion profiles, the Erfc profile exhibits the maximum efficiency of 23.53% with an optimized peak concentration of 2×1020 cm-3 for emitter and 1×1019 cm-3 for the back surface filed doping. PC1D was used for all the simulations.

Screen-printed n-type Si solar cells with laser-doped selective back surface field

Solar Energy ◽  
2021 ◽  
Vol 220 ◽  
pp. 211-216
Author(s):  
H.P. Yin ◽  
W.S. Tang ◽  
J.B. Zhang ◽  
W. Shan ◽  
X.M. Huang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Back Surface ◽  
Back Surface Field ◽  
Si Solar Cells ◽  
Surface Field ◽  
Screen Printed

Comparative study of electroluminescence from Cu(In,Ga)Se2 and Si solar cells

2007 ◽  
Vol 515 (15) ◽  
pp. 6238-6242 ◽  
Author(s):  
T. Kirchartz ◽  
U. Rau ◽  
M. Kurth ◽  
J. Mattheis ◽  
J.H. Werner
Keyword(s):  
Solar Cells ◽  
Comparative Study ◽  
Si Solar Cells

ZnS thin film functionalized as back surface field in Si solar cells

2018 ◽  
Vol 74 ◽  
pp. 309-312 ◽  
Author(s):  
Xueliang Yang ◽  
Bingbing Chen ◽  
Jianhui Chen ◽  
Yi Zhang ◽  
Wei Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Back Surface ◽  
Back Surface Field ◽  
Si Solar Cells ◽  
Surface Field

scholarly journals Influence of Different Types of Recombination Active Defects on the Integral Electrical Properties of Multicrystalline Silicon Solar Cells

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Dominik Lausch ◽  
Christian Hagendorf
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Short Circuit ◽  
Type A ◽  
Crystal Defects ◽  
Process Conditions ◽  
Type B ◽  
Si Solar Cells ◽  
Different Types ◽  
The Impact

In this contribution the influence of different types of recombination-active defects on the integral electrical properties of multicrystalline Si solar cells is investigated. Based on a previous classification scheme related to the luminescence behavior of crystal defects, Type-A and Type-B defects are locally distinguished. It is shown that Type-A defects, correlated to iron contaminations, are dominating the efficiency by more than 20% relative through their impact on the short circuit current ISC and open circuit voltage VOC in standard Si material (only limited by recombination active crystal defects). Contrarily, Type-B defects show low influence on the efficiency of 3% relative. The impact of the detrimental Type-A defects on the electrical parameters is studied as a function of the block height. A clear correlation between the area fraction of Type-A defects and both the global Isc and the prebreakdown behavior (reverse current) in voltage regime-2 (−11 V) is observed. An outlier having an increased full-area recombination activity is traced back to dense inter- and intragrain nucleation of Fe precipitates. Based on these results it is concluded that Type-A defects are the most detrimental defects in Si solar cells (having efficiencies > 15%) and have to be prevented by optimized Si material quality and solar cell process conditions.

Numerical analysis of CZTS/n-Si solar cells using SCAPS-1D. A comparative study between experimental and calculated outputs

2021 ◽  
Vol 121 ◽  
pp. 111544
Author(s):  
Amina Houimi ◽  
Serap Yiğit Gezgin ◽  
Bedrettin Mercimek ◽  
Hamdi Şükür Kılıç
Keyword(s):  
Solar Cells ◽  
Numerical Analysis ◽  
Comparative Study ◽  
Si Solar Cells

Screen-Printed Al Back Contacts on Si Solar Cells: Issues and Some Solutions

2009 ◽  
Vol 1210 ◽  
Author(s):  
Vishal Mehta ◽  
Bhushan Sopori ◽  
Robert Reedy ◽  
Bobby To ◽  
Helio Moutinho ◽  
...  
Keyword(s):  
Surface Tension ◽  
Solar Cells ◽  
Basic Problem ◽  
Series Resistance ◽  
Back Surface ◽  
Al Alloy ◽  
Back Contact ◽  
Back Surface Field ◽  
Si Solar Cells ◽  
Surface Field

AbstractThis paper identifies some mechanisms that lead to problems in back Al contact formation. Major issues are related to a basic problem that the Al melt has a large surface tension and tries to ball up during the firing step. Other issues arise from dissolution of the Si-Al interface and entrapment of glass within the Si-Al alloy. Si diffusion into Al can be applied to control the melt, while cooling rate can help improve the structure of various regions of the back contact for a favorable series resistance. We also discuss a modified time-temperature profile that can lead to a deep and uniform back-surface field.

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