High-resolution X-ray diffraction determination of composition grading in Hg1-xMnxTe grown by interdiffused multilayer organometallic vapour-phase epitaxy

1999 ◽  
Vol 357 (1761) ◽  
pp. 2801-2816
Author(s):  
C. D. Moore ◽  
B. K. Tanner
Keyword(s):  
High Resolution ◽  
Vapour Phase ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Diffraction Determination

scholarly journals High-resolution X-ray diffraction determination of the electron density of 1-(8-PhSC10H6)SS(C10H6SPh-8′)-1′ with the QTAIM approach: evidence for S4 σ(4c–6e) at the naphthalene peri-positions

RSC Advances ◽  
2018 ◽  
Vol 8 (18) ◽  
pp. 9651-9660 ◽  
Author(s):  
Yutaka Tsubomoto ◽  
Satoko Hayashi ◽  
Waro Nakanishi ◽  
Lucy K. Mapp ◽  
Simon J. Coles
Keyword(s):  
High Resolution ◽  
Electron Density ◽  
X Ray Diffraction ◽  
Ray Method ◽  
X Ray ◽  
Diffraction Determination

The nature of S4 σ(4c–6e) at the 1,8-positions of naphthalene is elucidated via a high-resolution X-ray method with the QTAIM approach.

scholarly journals Aluminium incorporation in polar, semi- and non-polar AlGaN layers: a comparative study of x-ray diffraction and optical properties

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Duc V. Dinh ◽  
Nan Hu ◽  
Yoshio Honda ◽  
Hiroshi Amano ◽  
Markus Pristovsek
Keyword(s):  
Room Temperature ◽  
Optical Emission ◽  
Vapour Phase ◽  
Optical Data ◽  
Bandgap Energy ◽  
X Ray Diffraction ◽  
Vapour Phase Epitaxy ◽  
X Ray ◽  
Metal Organic ◽  
Organic Vapour

Abstract Growth of AlxGa1−xN layers (0 ≤ x ≤ 1) simultaneously on polar (0001), semipolar ($$10\bar{{\rm{1}}}$$ 10 1 ¯ 3) and ($$11\bar{{\rm{2}}}2$$ 11 2 ¯ 2 ), as well as nonpolar ($$10\bar{{\rm{1}}}0$$ 10 1 ¯ 0 ) and ($$11\bar{{\rm{2}}}0$$ 11 2 ¯ 0 ) AlN templates, which were grown on planar sapphire substrates, has been investigated by metal-organic vapour phase epitaxy. By taking into account anisotropic in-plane strain of semi- and non-polar layers, their aluminium incorporation has been determined by x-ray diffraction analysis. Optical emission energy of the layers was obtained from room-temperature photoluminescence spectra, and their effective bandgap energy was estimated from room-temperature pseudo-dielectric functions. Both x-ray diffraction and optical data consistently show that aluminium incorporation is comparable on the polar, semi- and non-polar planes.

X-ray diffraction determination of a semiconductor epilayer unit cell oriented and distorted arbitrarily

1993 ◽  
Vol 26 (4A) ◽  
pp. A181-A187 ◽  
Author(s):  
B F Usher ◽  
G W Smith ◽  
S J Barnett ◽  
A M Keir ◽  
A D Pitt
Keyword(s):  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Determination

X-Ray Diffraction Determination of Metallurgical Damage in Turbo Blower Rotor Shafts

1988 ◽  
Vol 142 ◽  
Author(s):  
John F. Porter ◽  
Dan O. Morehouse ◽  
Mike Brauss ◽  
Robert R. Hosbons ◽  
John H. Root ◽  
...  
Keyword(s):  
Residual Stress ◽  
Hole Drilling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Turbo Blower ◽  
Diffraction Determination ◽  
Defence Research ◽  
Stress Profiles ◽  
Non Destructive

AbstractStudies have been ongoing at Defence Research Establishment Atlantic on the evaluation of non-destructive techniques for residual stress determination in structures. These techniques have included neutron diffraction, x-ray diffraction and blind-hole drilling. In conjunction with these studies, the applicability of these procedures to aid in metallurgical and failure analysis investigations has been explored. The x-ray diffraction technique was applied to investigate the failure mechanism in several bent turbo blower rotor shafts. All examinations had to be non-destructive in nature as the shafts were considered repairable. It was determined that residual stress profiles existed in the distorted shafts which strongly indicated the presence of martensitic microstuctures. These microstructures are considered unacceptable for these shafts due to the potential for cracking or in-service residual stress relaxation which could lead to future shaft distortion.

X‐ray diffraction determination of interfacial roughness correlation in SixGe1−x/Si and GaAs/AlxGa1−xAs superlattices

1992 ◽  
Vol 60 (24) ◽  
pp. 2986-2988 ◽  
Author(s):  
Y. H. Phang ◽  
D. E. Savage ◽  
T. F. Kuech ◽  
M. G. Lagally ◽  
J. S. Park ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Interfacial Roughness ◽  
X Ray ◽  
Diffraction Determination
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