Emission spectra of Cs-He excimers in cold helium gas

In this paper the selective patterning of poly [2-methoxy-5-(2'-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) and poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDOT: PSS) based on reactive ion etching for device fabrication is examined. These polymers were anisotropically etched using RIE in a helium plasma. Results show clearly that RIE using helium gas is effective at etching the polymers from the selected areas without physical damage to the working device. Further results show the electroluminescence spectra of etched and unetched devices have almost identical emission spectra, when these devices are operated as an LED. The external quantum efficiency (EQE) for these photodetectors was calculated and EQE peak values reached at 580nm are consistent between etched devices and unetched controls. Test devices show no decrease in EQE performance from RIE.

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In-situ electrical-resistivity measurements in the high-voltage electron microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100107484 ◽

1978 ◽

Vol 36 (1) ◽

pp. 68-69

Author(s):

W. E. King

Keyword(s):

Electrical Resistivity ◽

Electron Microscope ◽

High Voltage ◽

Resistivity Measurements ◽

Voltage Electron ◽

High Voltage Electron Microscope ◽

High Voltage Electron ◽

Wide Range ◽

Helium Gas

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).

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Nano-probe x-ray analysis and high-resolution imaging on planar defects in high-pressure synthesized infinite-layer superconductor

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171377 ◽

1994 ◽

Vol 52 ◽

pp. 728-729

Author(s):

Y. Y. Wang ◽

H. Zhang ◽

V. P. Dravid ◽

H. Zhang ◽

L. D. Marks ◽

...

Keyword(s):

High Pressure ◽

High Resolution ◽

Atomic Structure ◽

Emission Spectra ◽

High Resolution Electron Microscopy ◽

Planar Defects ◽

X Ray ◽

Infinite Layer ◽

Resolution Electron ◽

Resolution Imaging

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.

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