Origin of the Resistance-Area-Product Dependence of Spin-Transfer-Torque Switching in Perpendicular Magnetic Random-Access Memory Cells

This paper reviews the recent progress made to realize reliable write operations in spin transfer torque magnetic random access memory. Theoretical description of write error rate (WER) based on macro-spin models are discussed with comparison to experimental data. Recent studies on the phenomena that can lead to abnormal WER behaviors which include back-hopping and low probability bifurcated switching are reviewed with emphasis on underlying mechanism. The studies on the WER in perpendicular magnetic tunnel junction (MTJ) are also reviewed. It is demonstrated that, for both in-plane and perpendicular MTJ, reliable and error-free write operations can be achieved with thorough understanding of the underlying physics and innovative design/process solutions.

Download Full-text

Oxygen Scavenging by Ta Spacers in Double-MgO Free Layers for Perpendicular Spin-Transfer Torque Magnetic Random-Access Memory

IEEE Magnetics Letters ◽

10.1109/lmag.2016.2545638 ◽

2016 ◽

Vol 7 ◽

pp. 1-4 ◽

Cited By ~ 7

Author(s):

Sebastien Couet ◽

Johan Swerts ◽

Sofie Mertens ◽

Tsann Lin ◽

Yoann Tomczak ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Oxygen Scavenging

Download Full-text

Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers

Applied Physics Letters ◽

10.1063/1.4879847 ◽

2014 ◽

Vol 104 (21) ◽

pp. 212402 ◽

Cited By ~ 4

Author(s):

Eric R. Evarts ◽

Ranko Heindl ◽

William H. Rippard ◽

Matthew R. Pufall

Keyword(s):

Ferromagnetic Resonance ◽

Resonance Spectrum ◽

Random Access ◽

Random Access Memory ◽

Error Rates ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Access Memory ◽

Magnetic Random Access Memory ◽

Ferromagnetic Resonance Spectrum

Download Full-text

TETRAGONAL HEUSLER-LIKE Mn–Ga ALLOYS BASED PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS

SPIN ◽

10.1142/s2010324714400244 ◽

2014 ◽

Vol 04 (04) ◽

pp. 1440024 ◽

Cited By ~ 23

Author(s):

QINLI MA ◽

ATSUSHI SUGIHARA ◽

KAZUYA SUZUKI ◽

XIANMIN ZHANG ◽

TERUNOBU MIYAZAKI ◽

...

Keyword(s):

Tunnel Junctions ◽

Random Access ◽

Magnetic Tunnel Junctions ◽

Perpendicular Magnetic Anisotropy ◽

Random Access Memory ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Current Status ◽

Access Memory ◽

Magnetic Random Access Memory

Films of the Mn -based tetragonal Heusler-like alloys, such as Mn – Ga , exhibit a large perpendicular magnetic anisotropy (PMA), small damping constant, small saturation magnetization and large spin polarizations. These properties are attractive for the application to the next generation high density spin-transfer-torque (STT) magnetic random access memory (STT-MRAM). We reviewed the structure, magnetic properties and Gilbert damping of the alloy films with large PMA, and the current status of research on tunnel magnetoresistance (TMR) in perpendicular magnetic tunnel junctions (p-MTJs) based on Mn -based tetragonal Heusler-like alloy electrode, and also discuss the issues for the application of those to STT-MRAM.

Download Full-text