scholarly journals Hardware-Aware In Situ Learning Based on Stochastic Magnetic Tunnel Junctions

2022 ◽  
Vol 17 (1) ◽  
Author(s):  
Jan Kaiser ◽  
William A. Borders ◽  
Kerem Y. Camsari ◽  
Shunsuke Fukami ◽  
Hideo Ohno ◽  
...  
2001 ◽  
Vol 90 (3) ◽  
pp. 1675-1677 ◽  
Author(s):  
K. Knechten ◽  
P. LeClair ◽  
J. T. Kohlhepp ◽  
H. J. M. Swagten ◽  
B. Koopmans ◽  
...  

2006 ◽  
Vol 99 (8) ◽  
pp. 08T311 ◽  
Author(s):  
G. I. R. Anderson ◽  
A. T. Hindmarch ◽  
C. H. Marrows ◽  
B. J. Hickey

2006 ◽  
Vol 99 (8) ◽  
pp. 08K701 ◽  
Author(s):  
A. T. Hindmarch ◽  
G. I. R. Anderson ◽  
C. H. Marrows ◽  
B. J. Hickey

2014 ◽  
Vol 104 (22) ◽  
pp. 222401 ◽  
Author(s):  
Barry N. Costanzi ◽  
Anastasia V. Riazanova ◽  
E. Dan Dahlberg ◽  
Lyubov M. Belova

1999 ◽  
Vol 85 (8) ◽  
pp. 5261-5263 ◽  
Author(s):  
K. Matsuda ◽  
A. Kamijo ◽  
T. Mitsuzuka ◽  
H. Tsuge

2007 ◽  
Vol 7 (1) ◽  
pp. 255-258
Author(s):  
M. Mizuguchi ◽  
Y. Suzuki ◽  
T. Nagahama ◽  
S. Yuasa

The surface morphology of epitaxial Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions, which show the giant tunneling magnetoresistance effect, was investigated by in situ scanning tunneling microscopy. It was observed that an epitaxial MgO barrier layer forms flat surface structures. The surface was flatter with distinct steps and terraces after annealing, which would lead to an increase of the tunneling magnetoresistance ratio. Examination of the local electronic structures of 1.05-nm-thick MgO barrier layers by scanning tunneling spectroscopy revealed no pinholes in the layers, so they would be perfect barriers in magnetic tunnel junctions.


Sign in / Sign up

Export Citation Format

Share Document