scholarly journals Warm-up spectroscopy of quadrupole-split nuclear spins in n -GaAs epitaxial layers

2021 ◽  
Vol 104 (23) ◽  
Author(s):  
V. M. Litvyak ◽  
R. V. Cherbunin ◽  
V. K. Kalevich ◽  
A. I. Lihachev ◽  
A. V. Nashchekin ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Nuclear Spins ◽  
Quadrupole Split ◽  
Warm Up

The effects of psyching-up and a passive warm-up on muscular strength and fatigue

2007 ◽  
Author(s):  
David Tod ◽  
Jonathan Baker ◽  
Michael McGuigan
Keyword(s):  
Muscular Strength ◽  
Warm Up

Relaxation and phonon bottleneck of 169Tm nuclear spins in TmPO 4 : evidence for the direct process ?

1985 ◽  
Vol 46 (10) ◽  
pp. 1699-1708 ◽  
Author(s):  
Y. Roinel ◽  
V. Bouffard ◽  
J.-F. Jacquinot ◽  
C. Fermon ◽  
G. Fournier
Keyword(s):  
Nuclear Spins ◽  
Direct Process ◽  
Phonon Bottleneck

IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-693-C4-696 ◽  
Author(s):  
J. P. LAURENTI ◽  
P. ROENTGEN ◽  
K. WOLTER ◽  
K. SEIBERT ◽  
H. KURZ ◽  
...  
Keyword(s):  
Epitaxial Layers

Laser Annealing of Te-Implanted III-V Semiconductors Studied by Mossbauer Spectroscopy

1980 ◽  
Vol 3 ◽  
Author(s):  
M. Van Rossum ◽  
I. Dezsi ◽  
G. Langouche ◽  
J. De Bruyn ◽  
R. Coussement
Keyword(s):  
Mössbauer Spectroscopy ◽  
Laser Annealing ◽  
Mossbauer Spectroscopy ◽  
Quadrupole Split ◽  
Annealing Behaviour ◽  
Mößbauer Spectroscopy ◽  
Annealing Procedure

ABSTRACTThe laser annealing behaviour of Te-implanted GaAs, GaSb, GaP and InP has been studied by Mössbauer Spectroscopy. The spectra of the as-implanted samples are characterized by a quadrupole split multiplet, showing that the Te ions come to rest at non-substitutional lattice sites. The laser annealing is shown to shift the implanted impurities towards substitutional positions. The efficiency of the laser annealing procedure is very similar for all lattices under study.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

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