Valence band parameters for Hg1−xMgxTe epitaxial layers

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 1209-1213
Author(s):  
K Paesler
Keyword(s):  
Valence Band ◽  
Epitaxial Layers

Valence band parameters for Hg1−xMgxTe epitaxial layers

1998 ◽  
Vol 184-185 ◽  
pp. 1209-1213 ◽  
Author(s):  
K. Paesler ◽  
B. König ◽  
M. von Truchsess ◽  
A. Pfeuffer-Jeschke ◽  
S. Oehling ◽  
...  
Keyword(s):  
Valence Band ◽  
Epitaxial Layers

IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-693-C4-696 ◽  
Author(s):  
J. P. LAURENTI ◽  
P. ROENTGEN ◽  
K. WOLTER ◽  
K. SEIBERT ◽  
H. KURZ ◽  
...  
Keyword(s):  
Epitaxial Layers

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

PIERS Online ◽  
2006 ◽  
Vol 2 (6) ◽  
pp. 562-566 ◽  
Author(s):  
Chun-Nan Chen ◽  
Kao-Feng Yarn ◽  
Win Jet Luo ◽  
Jih-Chen Chiang ◽  
Ikai Lo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Optical Anisotropy ◽  
Band Mixing ◽  
Valence Band Mixing

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

1989 ◽  
Vol 54 (11) ◽  
pp. 2933-2950
Author(s):  
Emerich Erdös ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Experimental Data ◽  
Gallium Arsenide ◽  
Kinetic Study ◽  
Gas Phase ◽  
Growth Model ◽  
Epitaxial Layers ◽  
Inhomogeneous Model ◽  
Homogeneous Models ◽  
Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

scholarly journals Erratum: Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Nasser Alidoust ◽  
Guang Bian ◽  
Su-Yang Xu ◽  
Raman Sankar ◽  
Madhab Neupane ◽  
...  
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Spin Orbit ◽  
Quantum Well States

Oxidation of W(110): valence-band and W(4f) core-level spectroscopy

1994 ◽  
Vol 312 (1-2) ◽  
pp. 151-156 ◽  
Author(s):  
Charles H.F. Peden ◽  
Neal D. Shinn
Keyword(s):  
Valence Band ◽  
Core Level
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