Electron transport and band structure ofGa1−xAlxAsalloys

1980 ◽  
Vol 21 (2) ◽  
pp. 659-669 ◽  
Author(s):  
H. J. Lee ◽  
L. Y. Juravel ◽  
J. C. Woolley ◽  
A. J. Spring Thorpe
2002 ◽  
Vol 246 (3-4) ◽  
pp. 320-324 ◽  
Author(s):  
T.F de Vasconcelos ◽  
F.F Maia ◽  
E.W.S Caetano ◽  
V.N Freire ◽  
J.A.P da Costa ◽  
...  

1992 ◽  
Vol 72 (10) ◽  
pp. 4700-4704 ◽  
Author(s):  
Ganesh Samudra ◽  
Soo Jin Chua ◽  
Ajoy K. Ghatak ◽  
Vijay K. Arora

2004 ◽  
Vol 1 (S2) ◽  
pp. S268-S271
Author(s):  
F. F. Maia ◽  
M. Z. Flores ◽  
V. N. Freire ◽  
J. A. P. da Costa ◽  
E. F. da Silva

2004 ◽  
Vol 389 (4-6) ◽  
pp. 268-273 ◽  
Author(s):  
Giorgos Fagas ◽  
Agapi Kambili ◽  
Marcus Elstner

2018 ◽  
Vol 9 ◽  
pp. 1035-1039 ◽  
Author(s):  
Alexandra V Galeeva ◽  
Alexey I Artamkin ◽  
Alexey S Kazakov ◽  
Sergey N Danilov ◽  
Sergey A Dvoretskiy ◽  
...  

Terahertz photoconductivity in heterostructures based on n-type Hg1− x Cd x Te epitaxial films both in the topological phase (x < 0.16, inverted band structure, zero band gap) and the trivial state (x > 0.16, normal band structure) has been studied. We show that both the positive photoresponse in films with x < 0.16 and the negative photoconductivity in samples with x > 0.16 have no low-energy threshold. The observed non-threshold positive photoconductivity is discussed in terms of a qualitative model that takes into account a 3D potential well and 2D topological Dirac states coexisting in a smooth topological heterojunction.


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