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2012 IEEE Silicon Nanoelectronics Workshop (SNW)
Latest Publications
TOTAL DOCUMENTS
83
(FIVE YEARS 0)
H-INDEX
6
(FIVE YEARS 0)
Published By IEEE
9781467309974, 9781467309967, 9781467309950
Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Effect of Cu insertion layer between top electrode and switching layer on resistive switching characteristics
2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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10.1109/snw.2012.6243355
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2012
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Author(s):
Sunghun Jung
◽
Jeong-Hoon Oh
◽
Kyung-Chang Ryoo
◽
Sungjun Kim
◽
Jong-Ho Lee
◽
...
Keyword(s):
Resistive Switching
◽
Switching Characteristics
◽
Switching Layer
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High performance Ω-gate Ge FinFET featuring low temperature Si2H6 passivation and implantless Schottky-barrier NiGe metallic Source/Drain
2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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10.1109/snw.2012.6243323
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2012
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Author(s):
Bin Liu
◽
Xiao Gong
◽
Genquan Han
◽
Phyllis Shi Ya Lim
◽
Yi Tong
◽
...
Keyword(s):
Low Temperature
◽
Schottky Barrier
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High Performance
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Quantum transport simulation of III–V MOSFETs based on Wigner Monte Carlo approach
2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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10.1109/snw.2012.6243361
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2012
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Author(s):
Yosuke Maegawa
◽
Shunsuke Koba
◽
Hideaki Tsuchiya
◽
Matsuto Ogawa
Keyword(s):
Monte Carlo
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Quantum Transport
◽
Monte Carlo Approach
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Transport Simulation
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Counter dipole layer formation in SiO2/high-k/SiO2/Si gate stacks
2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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10.1109/snw.2012.6243325
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2012
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Author(s):
S. Hibino
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T. Nishimura
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K. Nagashio
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K. Kita
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A. Toriumi
Keyword(s):
Layer Formation
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Gate Stacks
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Dipole Layer
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High K
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Co-existed unipolar and bipolar resistive switching effect of HfOx-based RRAM
2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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10.1109/snw.2012.6243333
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2012
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Cited By ~ 1
Author(s):
B. Chen
◽
B. Gao
◽
Y.H. Fu
◽
R. Liu
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L. Ma
◽
...
Keyword(s):
Resistive Switching
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Switching Effect
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Bipolar Resistive Switching
◽
Resistive Switching Effect
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Fabrication and characterization of a Pi-gate ultrathin body junctionless poly-Si TFTs
2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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10.1109/snw.2012.6243302
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2012
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Author(s):
Jia-Jiun Wu
◽
Hung-Bin Chen
◽
Ming-Hung Han
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Yung-Chun Wu
◽
Chun-Yen Chang
Keyword(s):
Fabrication And Characterization
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Physical model for Random Telegraph Noise amplitudes and implications
2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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10.1109/snw.2012.6243296
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2012
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Cited By ~ 8
Author(s):
Richard G. Southwick
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K.P. Cheung
◽
J.P. Campbell
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S.A. Drozdov
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J.T. Ryan
◽
...
Keyword(s):
Physical Model
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Random Telegraph Noise
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Telegraph Noise
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Nanodot-type floating gate memory with high-density nanodot array formed utilizing Listeria Dps
2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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10.1109/snw.2012.6243352
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2012
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Author(s):
Hiroki Kamitake
◽
Kosuke Ohara
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Mutsunori Uenuma
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Bin Zheng
◽
Yasuaki Ishikawa
◽
...
Keyword(s):
High Density
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Floating Gate
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Nanodot Array
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Floating Gate Memory
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Bidirectional selection device characteristics of ultra-thin (<3nm) TiO2 layer for 3D vertically stackable ReRAM application
2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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10.1109/snw.2012.6243332
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2012
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Cited By ~ 1
Author(s):
Jiyong Woo
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Jubong Park
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Jungho Shin
◽
Godeuni Choi
◽
Seonghyun Kim
◽
...
Keyword(s):
Bidirectional Selection
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Characteristics and sensitivity of p-type junctionless gate-all-around nanowire transistor
2012 IEEE Silicon Nanoelectronics Workshop (SNW)
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10.1109/snw.2012.6243304
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2012
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Author(s):
Ming-Hung Han
◽
Yi-Ruei Jhan
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Jia-Jiun Wu
◽
Hung-Bin Chen
◽
Yung-Chun Wu
◽
...
Keyword(s):
Nanowire Transistor
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P Type
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