The electron transport phenomena in Y based HTSC's and their analysis on the basis of phenomenological narrow-band theory the band structure transformation with oxygen content and substitution for Cu

In a combined experimental and theoretical study of gold phosphide (Au2P3), we investigate its vibrational properties, band structure, and dielectric properties, providing new insight into the properties of this underexplored material. Using a simple synthesis route, Au2P3 thin films were produced, enabling the first reported Raman analysis of this material. Coupled with first-principles calculations of these Raman modes, this analysis reveals that low-frequency vibrations are due to Au or mixed Au to P, and at higher frequencies, they are due to P vibrations. Further band structure and dielectric calculations reveal Au2P3 to be a narrow band (0.16 eV) indirect semiconductor. This work helps to fill major gaps in our understanding of key properties in this material that will benefit future research in this field.

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Electron transport and band structure ofGa1−xAlxAsalloys

Physical Review B ◽

10.1103/physrevb.21.659 ◽

1980 ◽

Vol 21 (2) ◽

pp. 659-669 ◽

Cited By ~ 334

Author(s):

H. J. Lee ◽

L. Y. Juravel ◽

J. C. Woolley ◽

A. J. Spring Thorpe

Keyword(s):

Electron Transport ◽

Band Structure

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Elementary energy bands in the band structure of the narrow-band-gap semiconductor CdSb

Physical Review B ◽

10.1103/physrevb.70.235206 ◽

2004 ◽

Vol 70 (23) ◽

Cited By ~ 16

Author(s):

D. M. Bercha ◽

I. V. Slipukhina ◽

M. Sznajder ◽

K. Z. Rushchanskii

Keyword(s):

Band Structure ◽

Band Gap ◽

Narrow Band ◽

Energy Bands

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Electron transport phenomena in two-dimensional thin films of pure bismuth

Journal of Physics and Chemistry of Solids ◽

10.1016/0022-3697(89)90021-8 ◽

1989 ◽

Vol 50 (11) ◽

pp. 1121-1126 ◽

Cited By ~ 5

Author(s):

H.T. Chu ◽

Yimin Ji

Keyword(s):

Thin Films ◽

Electron Transport ◽

Transport Phenomena ◽

Two Dimensional ◽

Pure Bismuth

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Band Structure Calculations and Magnetic Relaxation in Correlated Semiconductors FeSb2 and RuSb2

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.152-153.287 ◽

2009 ◽

Vol 152-153 ◽

pp. 287-290 ◽

Cited By ~ 9

Author(s):

A.A. Gippius ◽

K.S. Okhotnikov ◽

M. Baenitz ◽

A.V. Shevelkov

Keyword(s):

Band Structure ◽

Magnetic Relaxation ◽

Narrow Band ◽

Relaxation Mechanism ◽

Activation Mechanism ◽

Oxidation Number ◽

Band Structure Calculations ◽

Gap States ◽

Structure Calculations ◽

Behavior Characteristic

A comparative study of electronic properties of the two isostructural narrow-band semiconductors FeSb2 and RuSb2 by means of experimental NQR spectroscopy as well as theoretical ab-initio band structure calculations is presented. The temperature dependence of 1/T1 consists of two distinct intervals: above 40 K (HT) with activated behavior for FeSb2 with D/kB @ 450 K and below 40 K (LT) with smooth maximum at 10 K. Here the relaxation is governed by in-gap states. We propose the model of inherent Sb-deficiency (as prepared non-stoichiometry) of both FeSb2 and RuSb2 as a possible reason of the in-gap states. This results in creation of a small portion of Fe (Ru) ions possessing formal oxidation number +3 with d5 configuration and forming narrow energy level of localized S = ½ spins near the bottom of the conduction band. Due to much higher gap value in RuSb2, the activation mechanism for RuSb2 in the HT range is inefficient and the 1/T1 dependence in the HT range is more close to T2 behavior characteristic for phonon relaxation mechanism by two-phonon (Raman) scattering.

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