Intersubband optical absorption in coupled quantum wells under an applied electric field

1988 ◽  
Vol 38 (12) ◽  
pp. 8377-8382 ◽  
Author(s):  
Perng-fei Yuh ◽  
K. L. Wang
2012 ◽  
Vol 85 (4) ◽  
Author(s):  
K. Sivalertporn ◽  
L. Mouchliadis ◽  
A. L. Ivanov ◽  
R. Philp ◽  
E. A. Muljarov

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.


1992 ◽  
Vol 46 (7) ◽  
pp. 4041-4046 ◽  
Author(s):  
Rosana B. Santiago ◽  
Luiz E. Oliveira ◽  
J. d’Albuquerque e Castro

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