OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

BINDING ENERGY FOR A SHALLOW DONOR IMPURITY IN GaAs–(Ga, Al)As QUANTUM WELLS UNDER HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1753-1756 ◽  
Author(s):  
A. MONTES ◽  
A. L. MORALES ◽  
C. A. DUQUE
Keyword(s):  
Wave Function ◽  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Wells ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Donor Impurity ◽  
External Hydrostatic Pressure ◽  
Mass Approximation

The present work investigates the effects of the hydrostatic pressure and the external applied electric field on the binding energy for shallow donor impurities in GaAs–Ga 1 - x Al x As quantum wells. The effective mass approximation is used and a trial envelope wave function is adopted for the impurity carrier. For fixed well width and applied electric field, the binding energy of the shallow donor impurity is enhanced by increasing the external hydrostatic pressure, and for fixed well width and hydrostatic pressure, the binding energy decreases by increasing the external electric field.

BARRIER THICKNESS DEPENDENCE OF OPTICAL ABSORPTION OF EXCITONS IN GaAs COUPLED QUANTUM WIRE

2004 ◽  
Vol 11 (01) ◽  
pp. 49-55 ◽  
Author(s):  
E. KASAPOGLU ◽  
M. GUNES ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Quantum Wire ◽  
Variational Approach ◽  
Quantum Wires ◽  
Binding Energies ◽  
Barrier Thickness ◽  
Mass Approximation ◽  
Quantum Well Wires ◽  
Coupled Quantum Well

We have calculated the binding energy of excitons, and the interband optical absorption in rectangular coupled quantum-well wires of GaAs surrounded by Ga 1-x Al x As in effective-mass approximation, using the variational approach. Results obtained show that the exciton binding energies and optical absorption depend on the sizes of the wire and barrier thickness. To the best of our knowledge the exciton binding energy and interband optical absorption in the rectangular coupled quantum wires have not been clarified yet.

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