Improvement in intersubband optical absorption and the effects of device parameter variations in quantum wells with an applied electric field

1999 ◽  
Vol 26 (6) ◽  
pp. 395-404 ◽  
Author(s):  
E. Kasapoglu ◽  
H. Sari ◽  
Y. Ergün ◽  
I. Sokmen
2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.


1992 ◽  
Vol 46 (7) ◽  
pp. 4041-4046 ◽  
Author(s):  
Rosana B. Santiago ◽  
Luiz E. Oliveira ◽  
J. d’Albuquerque e Castro

2004 ◽  
Vol 11 (03) ◽  
pp. 297-303 ◽  
Author(s):  
E. OZTURK ◽  
H. SARI ◽  
I. SOKMEN

Within the framework of the effective mass approximation, we have theoretically investigated the linear intersubband optical absorption in a quantum well under external electric and intense laser field. Results obtained show that intersubband optical transition and energy levels in quantum wells can significantly be modified and controlled by the electric field and intense laser field. Generally there is a distinct feature for the case of the intersubband absorption compared with intersubband optical absorption in a quantum well with an applied electric field.


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