Pseudopotential Calculation of Transverse Effective Charges for III-V and II-VI Compounds of the Zinc-Blende Structure

1972 ◽  
Vol 5 (10) ◽  
pp. 4146-4154 ◽  
Author(s):  
B. I. Bennett ◽  
A. A. Maradudin
1959 ◽  
Vol 37 (7) ◽  
pp. 1191-1196 ◽  
Author(s):  
W. B. Pearson

Difficulties of determining the binding energies and effective charges on the atoms are the main reason why no systematic explanation of the variation of the size of the energy gap among members of the simplest family of semiconductors—those with the zinc blende structure—has ever been given. It is shown that by the choice of suitable atomic parameters for discussing the activation energies of these compounds these difficulties may be avoided, and the variation of the size of the energy gap between one compound and another can be systematically accounted for. In the treatment which develops no particular distinction need be made between the III–V, II–VI, and I–VII compounds, and it is concluded that the anomalously high or low activation energies, which certain compounds appear to have, are just the result of the relative sizes of the cations and anions in influencing the polarization of the bonds.


2009 ◽  
Vol 631-632 ◽  
pp. 327-331 ◽  
Author(s):  
K. Sakon ◽  
Y. Hirokawa ◽  
Yasuji Masubuchi ◽  
Shinichi Kikkawa

Sputter deposited Fe0.7Co0.3 nitride thin film had zinc blende structure. It was thermally decomposed completely back to the ferromagnetic Fe0.7Co0.3 alloy above 400°C. As-deposited nitride thin films obtained in cosputtering of (Fe0.7Co0.3)1-xAlx composite target with nitrogen sputter gas were solid solutions with zinc blende (x≤0.44) and wurtzite (x>0.5) type structure, respectively. The largest magneto resistance ratio of 0.24% was observed on the Fe0.7Co0.3 alloy particles dispersed in AlN thin film obtained by thermal decomposition of the nitride solid solution with x=0.66 at 500°C.


1969 ◽  
pp. 101-150 ◽  
Author(s):  
Vasilii M. Glazov ◽  
Svetlana N. Chizhevskaya ◽  
Natal’ya N. Glagoleva

2011 ◽  
Vol 50 (23) ◽  
pp. 11958-11964 ◽  
Author(s):  
Shenjie Li ◽  
Zechen Zhao ◽  
Qinghui Liu ◽  
Lijian Huang ◽  
Gang Wang ◽  
...  

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