Magneto-optical spectroscopy of free- and bound-electron-hole excitations in the presence of a two-dimensional electron gas

1994 ◽  
Vol 50 (16) ◽  
pp. 11895-11901 ◽  
Author(s):  
R. Stȩpniewski ◽  
M. Potemski ◽  
H. Buhmann ◽  
D. Toet ◽  
J. C. Maan ◽  
...  
Keyword(s):  
Optical Spectroscopy ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron Hole ◽  
Dimensional Electron Gas ◽  
Bound Electron

Band Gap States in AlGaN/GaN Hetero-Interface Studied by Deep-Level Optical Spectroscopy

2009 ◽  
Vol 1202 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Keiji Nakamura ◽  
Yoshihiro Irokawa ◽  
Masaki Takeguchi
Keyword(s):  
Steady State ◽  
Optical Spectroscopy ◽  
Deep Level ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Capacitance Voltage ◽  
Dimensional Electron Gas ◽  
Gap States

AbstractPlanar Pt/AlGaN/GaN Schottky barrier diodes (SBDs) have been characterized by capacitance-voltage and capacitance deep-level optical spectroscopy measurements, compared to reference Pt/GaN:Si SBDs. Two specific deep levels are found to be located at ∼1.70 and ∼2.08 eV below the conduction band, which are clearly different from deep-level defects (Ec - 1.40, Ec - 2.64, and Ec - 2.90 eV) observed in the Pt/GaN:Si SBDs. From the diode bias dependence of the steady-state photocapacitance, these levels are believed to stem from a two-dimensional electron gas (2DEG) region at the AlGaN/GaN hetero-interface. In particular, the 1.70 eV level is likely to act as an efficient generation-recombination center of 2DEG carriers.

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