Optical-phonon emission in GaAs/AlAs multiple-quantum-well structures determined by hot-electron luminescence

1995 ◽  
Vol 52 (19) ◽  
pp. 14144-14149 ◽  
Author(s):  
V. F. Sapega ◽  
M. P. Chamberlain ◽  
T. Ruf ◽  
M. Cardona ◽  
D. N. Mirlin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Phonon ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Hot Electron ◽  
Quantum Well Structures ◽  
Phonon Emission ◽  
Optical Phonon Emission

Electron-Optical-Phonon Interaction in Semiconductor Multiple-Quantum-Well Structures

1988 ◽  
Vol 61 (12) ◽  
pp. 1408-1411 ◽  
Author(s):  
Y. -H. Chang ◽  
B. D. McCombe ◽  
J. -M. Mercy ◽  
A. A. Reeder ◽  
J. Ralston ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Phonon ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Phonon Interaction ◽  
Quantum Well Structures

Electron–electron inter-subband scattering in GaAs quantum wells

1996 ◽  
Vol 74 (S1) ◽  
pp. 252-255
Author(s):  
Zhi Zhong Xu ◽  
D. Morris
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electron Scattering ◽  
Multiple Quantum Well ◽  
Golden Rule ◽  
Multiple Quantum ◽  
Hot Electron ◽  
Quantum Well Structures ◽  
Scattering Rate ◽  
Relaxation Channel

The role of electron–electron scattering in the dynamics of inter-subband relaxation in GaAs quantum wells is investigated theoretically. The scattering rate is calculated using the Fermi golden rule, as a function of the carrier densities. The dependence of the inter-subband relaxation time on the quantum-well width is also investigated. Calculations are performed for multiple quantum-well structures with well widths varying from 80 to 240 Å (1 Å = 10−10 m). The hot electron distribution and the subband occupation function are taken into account in these calculations. Results show that the electron–electron scattering rate increases linearly as a function of the carrier densities. A band-filling effect limits the efficiency of this mechanism under high carrier densities (> 1012 cm−2). For thick well (180 Å) structures, this relaxation channel is as efficient as the phonon relaxation channel.

Inelastic hot electron scattering by neutral acceptors in multiple quantum well structures

1997 ◽  
Vol 103 (3) ◽  
pp. 151-154 ◽  
Author(s):  
I.I. Reshina ◽  
D.N. Mirlin ◽  
V.I. Perel ◽  
A.Yu. Dobin ◽  
A.G. Agranov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Scattering ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Hot Electron ◽  
Quantum Well Structures
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