Photorefractive phase shift induced by hot-electron transport: multiple-quantum-well structures

1994 ◽  
Vol 11 (9) ◽  
pp. 1773 ◽  
Author(s):  
Q. N. Wang ◽  
R. M. Brubaker ◽  
D. D. Nolte
1996 ◽  
Vol 74 (S1) ◽  
pp. 252-255
Author(s):  
Zhi Zhong Xu ◽  
D. Morris

The role of electron–electron scattering in the dynamics of inter-subband relaxation in GaAs quantum wells is investigated theoretically. The scattering rate is calculated using the Fermi golden rule, as a function of the carrier densities. The dependence of the inter-subband relaxation time on the quantum-well width is also investigated. Calculations are performed for multiple quantum-well structures with well widths varying from 80 to 240 Å (1 Å = 10−10 m). The hot electron distribution and the subband occupation function are taken into account in these calculations. Results show that the electron–electron scattering rate increases linearly as a function of the carrier densities. A band-filling effect limits the efficiency of this mechanism under high carrier densities (> 1012 cm−2). For thick well (180 Å) structures, this relaxation channel is as efficient as the phonon relaxation channel.


1997 ◽  
Vol 103 (3) ◽  
pp. 151-154 ◽  
Author(s):  
I.I. Reshina ◽  
D.N. Mirlin ◽  
V.I. Perel ◽  
A.Yu. Dobin ◽  
A.G. Agranov ◽  
...  

1992 ◽  
Vol 46 (12) ◽  
pp. 7745-7754 ◽  
Author(s):  
Rita Gupta ◽  
N. Balkan ◽  
B. K. Ridley

1995 ◽  
Vol 52 (19) ◽  
pp. 14144-14149 ◽  
Author(s):  
V. F. Sapega ◽  
M. P. Chamberlain ◽  
T. Ruf ◽  
M. Cardona ◽  
D. N. Mirlin ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

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