Electronic structure of defects and impurities in III-V nitrides: Vacancies in cubic boron nitride

1996 ◽  
Vol 53 (8) ◽  
pp. 4377-4385 ◽  
Author(s):  
V. A. Gubanov ◽  
Z. W. Lu ◽  
Barry M. Klein ◽  
C. Y. Fong
Keyword(s):  
Electronic Structure ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Defects And Impurities

Electronic structure of defects and impurities in III-V nitrides. II. Be, Mg, and Si in cubic boron nitride

1997 ◽  
Vol 56 (20) ◽  
pp. 13077-13086 ◽  
Author(s):  
V. A. Gubanov ◽  
E. A. Pentaleri ◽  
C. Y. Fong ◽  
B. M. Klein
Keyword(s):  
Electronic Structure ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Defects And Impurities

Electronic Structure and Stability of Be Impurities in Cubic Boron Nitride

1998 ◽  
Vol 210 (2) ◽  
pp. 401-405 ◽  
Author(s):  
J.L.P. Castineira ◽  
J.R. Leite ◽  
J.L.F. da Silva ◽  
L.M.R. Scolfaro ◽  
J.L.A. Alves ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Structure And Stability

Depth distribution of defects and impurities in diamond and cubic boron nitride after high-energy ion implantation

1989 ◽  
Vol 115 (2) ◽  
pp. 427-435 ◽  
Author(s):  
A. F. Burenkov ◽  
V. S. Varychenko ◽  
A. M. Zaitsev ◽  
F. F. Komarov ◽  
G. G. Konoplyanik ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Ion Implantation ◽  
Depth Distribution ◽  
Cubic Boron Nitride ◽  
High Energy ◽  
Defects And Impurities

First principles studies of point defects and impurities in cubic boron nitride

1998 ◽  
Vol 51 (1-3) ◽  
pp. 53-57 ◽  
Author(s):  
J.L.P Castineira ◽  
J.R Leite ◽  
L.M.R Scolfaro ◽  
R Enderlein ◽  
J.L.A Alves ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Point Defects ◽  
First Principles ◽  
Cubic Boron Nitride ◽  
Defects And Impurities

scholarly journals First-principle study of vacancy-induced cubic boron nitride electronic structure and optical propertiy changes

2013 ◽  
Vol 62 (7) ◽  
pp. 074201
Author(s):  
Li Yu-Bo ◽  
Wang Xiao ◽  
Dai Ting-Ge ◽  
Yuan Guang-Zhong ◽  
Yang Hang-Sheng
Keyword(s):  
Electronic Structure ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
First Principle

Structural relationships in the synthesis of cubic boron nitride thin films by ion-assisted deposition

1994 ◽  
Vol 52 ◽  
pp. 638-639
Author(s):  
D. L. Medlin ◽  
T. A. Friedmann ◽  
P. B. Mirkarimi ◽  
M. J. Mills ◽  
K. F. McCarty
Keyword(s):  
Boron Nitride ◽  
Ion Irradiation ◽  
Cubic Boron Nitride ◽  
Film Stress ◽  
Bonded Phases ◽  
Structural Relationships ◽  
Precursor Material ◽  
Pressure Synthesis ◽  
Microstructure Of The Material

The allotropes of boron nitride include two sp2-bonded phases with hexagonal and rhombohedral structures (hBN and rBN) and two sp3-bonded phases with cubic (zincblende) and hexagonal (wurtzitic) structures (cBN and wBN) (Fig. 1). Although cBN is synthesized in bulk form by conversion of hBN at high temperatures and pressures, low-pressure synthesis of cBN as a thin film is more difficult and succeeds only when the growing film is simultaneously irradiated with a high flux of ions. Only sp2-bonded material, which generally has a disordered, turbostratic microstructure (tBN), will form in the absence of ion-irradiation. The mechanistic role of the irradiation is not well understood, but recent work suggests that ion-induced compressive film stress may induce the transformation to cBN.Typically, BN films are deposited at temperatures less than 1000°C, a regime for which the structure of the sp2-bonded precursor material dictates the phase and microstructure of the material that forms from conventional (bulk) high pressure treatment.

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