Electron-phonon scattering rates in semiconductor quantum wells with thin AlAs layers

1997 ◽  
Vol 56 (20) ◽  
pp. 13428-13433 ◽  
Author(s):  
Cynthia R. McIntyre ◽  
T. L. Reinecke
1997 ◽  
Vol 482 ◽  
Author(s):  
T. F. Forbang ◽  
C. R. McIntyre

AbstractWe have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electroninterface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.


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